onsemi_NSVBC817-16LT1G

onsemi
NSVBC817-16LT1G  
Single Bipolar Transistors

onsemi
NSVBC817-16LT1G
276-NSVBC817-16LT1G
Ersa
onsemi-NSVBC817-16LT1G-datasheets-1197777.pdf
TRANS NPN 45V 0.5A SOT23-3
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NSVBC817-16LT1G Description

NSVBC817-16LT1G Description

The NSVBC817-16LT1G is a high-performance NPN transistor designed for a wide range of applications in the electronics industry. Manufactured by onsemi, this device boasts an impressive set of technical specifications, making it a popular choice for engineers and designers alike. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA, the NSVBC817-16LT1G is capable of handling demanding tasks in various electronic circuits.

NSVBC817-16LT1G Features

  • Frequency - Transition: 100MHz, ensuring fast switching capabilities for high-speed applications.
  • Current - Collector (Ic) (Max): 500 mA, providing ample current handling capacity.
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, contributing to low power consumption in saturation.
  • ECCN: EAR99, indicating export control classification.
  • Mounting Type: Surface Mount, facilitating easy integration into PCB designs.
  • Product Status: Active, ensuring ongoing availability and support.
  • Voltage - Collector Emitter Breakdown (Max): 45 V, suitable for high-voltage applications.
  • Transistor Type: NPN, offering excellent current gain and switching characteristics.
  • Power - Max: 225 mW, allowing for efficient power management.
  • REACH Status: REACH Unaffected, adhering to European chemical safety regulations.
  • RoHS Status: ROHS3 Compliant, ensuring environmental responsibility.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, providing reliable current gain.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture.

NSVBC817-16LT1G Applications

The NSVBC817-16LT1G is ideal for a variety of applications where high performance and reliability are paramount. Some specific use cases include:

  • Automotive electronics: Due to its high voltage and current ratings, it is suitable for automotive control systems.
  • Industrial control systems: The device's robustness makes it a good fit for industrial applications requiring high reliability.
  • Telecommunications equipment: Its high-frequency capabilities make it suitable for use in telecommunications infrastructure.
  • Power management circuits: The device's ability to handle high power levels makes it ideal for power management applications.

Conclusion of NSVBC817-16LT1G

The NSVBC817-16LT1G stands out as a versatile and high-performing NPN transistor, offering a unique combination of high voltage, current handling, and frequency capabilities. Its compliance with environmental regulations and ongoing availability make it an excellent choice for a wide range of applications in the electronics industry. With its robust performance and reliability, the NSVBC817-16LT1G is a trusted component for engineers seeking to push the boundaries of their designs.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Supplier Temperature Grade
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Qualification
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
DC Current Gain hFE Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
Pd - Power Dissipation
USHTS

NSVBC817-16LT1G Documents

Download datasheets and manufacturer documentation for NSVBC817-16LT1G

Ersa Compound Qual 14/Jun/2019      
Ersa BC817-xxL, SBC817-xxL      
Ersa SOT23 27/Sep/2016       Material/Assembly Site Addition 22/Oct/2015      
Ersa onsemi RoHS       Material Declaration NSVBC817-16LT1G       onsemi REACH      

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