onsemi_NSVBC857BTT1G
original

onsemi
NSVBC857BTT1G

276-NSVBC857BTT1G
PDF Datasheet
PNP Bipolar Transistor, 3000-REEL
12 Weeks

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ISO9001
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Tech Specifications

Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
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NSVBC857BTT1G Description

NSVBC857BTT1G Description

The NSVBC857BTT1G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for low-power, high-frequency applications. Packaged in a compact SC-75 (SOT-416) surface-mount form factor, it offers a 45V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current (IC), making it ideal for signal amplification and switching in space-constrained designs. With a transition frequency (fT) of 100MHz, it ensures efficient operation in high-speed circuits. The device is RoHS3 compliant, REACH unaffected, and features a moisture sensitivity level (MSL) of 1, ensuring reliability in diverse environmental conditions.

NSVBC857BTT1G Features

  • Low VCE(sat): Only 650mV at 5mA base current (IB) and 100mA collector current, minimizing power loss in switching applications.
  • High DC Current Gain (hFE): 220 (min) at 2mA IC and 5V VCE, ensuring strong signal amplification.
  • Ultra-Low Leakage Current: 15nA (max) collector cutoff current (ICBO) enhances efficiency in precision circuits.
  • Compact & Reliable: SC-75 package (1.2mm x 0.8mm) saves PCB space while maintaining 200mW max power dissipation.
  • Wide Operating Range: Suitable for -55°C to +150°C environments, backed by onsemi's quality assurance.

NSVBC857BTT1G Applications

This transistor excels in:

  • Portable Electronics: Audio amplifiers, sensor interfaces, and battery management systems due to low VCE(sat) and small footprint.
  • High-Speed Switching: Load drivers, level shifters, and signal inverters in IoT devices, leveraging its 100MHz fT.
  • Automotive & Industrial Systems: Robust performance in harsh conditions, ideal for control modules and low-power motor drivers.
  • Consumer Electronics: Remote controls, LED drivers, and low-noise preamplifiers benefit from its high hFE and low leakage.

Conclusion of NSVBC857BTT1G

The NSVBC857BTT1G stands out as a versatile, high-efficiency PNP transistor for modern low-power designs. Its optimized saturation voltage, high gain, and miniature package make it superior to generic BJTs in applications demanding space savings, energy efficiency, and signal fidelity. Whether in wearables, automotive subsystems, or precision analog circuits, this device delivers reliable performance with onsemi's proven quality. A top choice for engineers prioritizing size, speed, and power economy in next-generation electronics.

FAQ

What is NSVBC857BTT1G?
NSVBC857BTT1G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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