onsemi_NSVBCP53-16T3G
original

onsemi
NSVBCP53-16T3G

276-NSVBCP53-16T3G
PDF Datasheet
PNP 80 V Bipolar Transistor, 4000-REEL
13 Weeks

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Tech Specifications

Package/Case
TO-261-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector-emitter Voltage-Max
500mV
Lead Free
Lead Free
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
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NSVBCP53-16T3G Description

NSVBCP53-16T3G Description

The NSVBCP53-16T3G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for surface-mount applications. With a collector-emitter voltage (VCE) rating of 80V and a maximum collector current (IC) of 1.5A, this transistor is optimized for medium-power switching and amplification tasks. Its low VCE(sat) of 500mV (at 50mA base current and 500mA collector current) ensures efficient operation, minimizing power dissipation. The device is housed in a SOT-223 package, offering a compact footprint while maintaining excellent thermal performance.

NSVBCP53-16T3G Features

  • High Voltage & Current Handling: Supports 80V VCEO and 1.5A IC, making it suitable for robust applications.
  • Low Saturation Voltage: 500mV @ 500mA reduces power loss in switching applications.
  • High DC Current Gain (hFE): Min 100 @ 150mA, 2V, ensuring reliable amplification.
  • Surface-Mount Design: SOT-223 package enables space-efficient PCB layouts.
  • Low Leakage Current: 100nA (ICBO) enhances efficiency in standby modes.
  • Reliable & RoHS Compliant: ROHS3 and REACH unaffected, meeting environmental standards.
  • Wide Operating Frequency: 50MHz transition frequency supports high-speed switching.

NSVBCP53-16T3G Applications

This transistor is ideal for:

  • Power Management: DC-DC converters, voltage regulators, and load switches.
  • Motor Control: Driver circuits for small motors and solenoids.
  • Audio Amplification: Low-noise signal amplification in audio stages.
  • Industrial Automation: Relay drivers and logic-level translation.
  • Consumer Electronics: Power switching in portable devices and battery management.

Conclusion of NSVBCP53-16T3G

The NSVBCP53-16T3G combines high voltage tolerance, low saturation loss, and compact packaging, making it a versatile choice for power and signal control applications. Its high hFE and low leakage ensure efficiency, while onsemi’s reliability guarantees long-term performance. Engineers designing energy-efficient, space-constrained systems will find this transistor an excellent fit for demanding environments.

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