onsemi

NSVDTA114EET1G  

Single, Pre-Biased Bipolar Transistors

NSVDTA114EET1G Description

The NSVDTA114EET1G is a pre-biased PNP bipolar transistor offered by onsemi, designed for high performance in a variety of electronic applications. This device is characterized by its robust technical specifications, making it a reliable choice for professionals in the electronics industry.

NSVDTA114EET1G Features

• Technical Specifications: The NSVDTA114EET1G boasts a maximum collector current (Ic) of 100 mA, ensuring efficient power handling. It features a low saturation voltage (Vce Saturation) of 250mV at 300µA and 10mA, which contributes to its high efficiency in operation. The device also has a maximum power rating of 200 mW and a collector-emitter breakdown voltage of 50 V, providing robust performance under various conditions.
• Resistors: It includes an integrated resistor - Base (R1) of 10 kOhms and a resistor - Emitter Base (R2) of 10 kOhms, simplifying the design process and reducing the number of external components needed.
• Compliance: The NSVDTA114EET1G is REACH Unaffected and ROHS3 Compliant, adhering to environmental standards and ensuring sustainability in electronic manufacturing.
• Gain: With a minimum DC current gain (hFE) of 35 at 5mA and 10V, this transistor offers consistent performance, which is crucial for maintaining signal integrity in electronic circuits.

NSVDTA114EET1G Applications

The NSVDTA114EET1G is ideal for applications where high efficiency and reliability are paramount. Some specific use cases include:

• Automotive Electronics: Due to its high voltage and current ratings, it is suitable for use in automotive control systems and power management.
• Industrial Controls: The device's robustness makes it a good fit for industrial applications where reliability and longevity are essential.
• Communication Systems: Its low saturation voltage and high gain make it suitable for use in communication systems where signal integrity is critical.

Conclusion of NSVDTA114EET1G

The NSVDTA114EET1G stands out with its combination of high efficiency, robustness, and compliance with environmental standards. Its integrated resistors and low saturation voltage make it a preferred choice for designers looking to simplify their designs while maintaining high performance. Whether used in automotive, industrial, or communication systems, the NSVDTA114EET1G delivers reliable and efficient operation, making it a valuable component in a wide range of electronic devices.

NSVDTA114EET1G Documents

Download datasheets and manufacturer documentation for NSVDTA114EET1G

Datasheets :

MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3      

HTML Datasheet :

MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3      

Environmental Information :

onsemi RoHS       Material Declaration NSVDTA114EET1G       onsemi REACH