onsemi_NSVMMBT2222ATT1G
original

onsemi
NSVMMBT2222ATT1G

276-NSVMMBT2222ATT1G
PDF Datasheet
NPN Bipolar Junction Transistor, 3000-REEL
12 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-416
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector-emitter Voltage-Max
1V
Gain Bandwidth Product
300MHz
Height
900um
hFE Min
40
Show More

NSVMMBT2222ATT1G Description

NSVMMBT2222ATT1G Description

The NSVMMBT2222ATT1G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Encased in a compact SC-75 (SOT-416) surface-mount package, it offers a 40V collector-emitter breakdown voltage (VCEO) and a 600mA continuous collector current (IC), making it suitable for low-to-medium power circuits. With a transition frequency (fT) of 300MHz, it ensures efficient high-frequency operation, while its low VCE(sat) of 1V @ 500mA minimizes power loss in switching applications. Compliant with ROHS3 and REACH standards, it is ideal for environmentally conscious designs.

NSVMMBT2222ATT1G Features

  • High Current Gain (hFE): Minimum 100 @ 150mA, 10V, ensuring reliable amplification.
  • Low Saturation Voltage: 1V @ 50mA, 500mA, enhancing efficiency in switching applications.
  • Compact & Reliable: SC-75 package (1.6mm x 0.8mm) saves board space while maintaining robustness.
  • Wide Operating Range: -55°C to +150°C junction temperature tolerance for diverse environments.
  • Fast Switching: 300MHz transition frequency supports high-speed signal processing.
  • Compliance: ROHS3, REACH, and ECCN EAR99 certified, suitable for global markets.

NSVMMBT2222ATT1G Applications

  • Signal Amplification: Ideal for RF and audio stages due to high fT and gain.
  • Switching Circuits: Efficient in relay drivers, LED controllers, and logic-level converters.
  • Portable Electronics: Low-profile package suits smartphones, wearables, and IoT devices.
  • Automotive Systems: Reliable performance in sensors, infotainment, and power management.
  • Industrial Controls: Robust operation in motor drivers and power supply modules.

Conclusion of NSVMMBT2222ATT1G

The NSVMMBT2222ATT1G combines high-speed performance, compact packaging, and energy efficiency, making it a versatile choice for modern electronics. Its low saturation voltage, high current gain, and compliance with environmental standards position it as a superior alternative to conventional BJTs in space-constrained and high-reliability applications. Whether for amplification, switching, or embedded systems, this transistor delivers consistent performance across industrial, automotive, and consumer markets.

FAQ

Does NSVMMBT2222ATT1G have quantity-based pricing?
Yes. NSVMMBT2222ATT1G currently has 3 pricing tier(s), starting from 5 units.
What voltage specification is listed for NSVMMBT2222ATT1G?
What is the mounting type of NSVMMBT2222ATT1G?
Is NSVMMBT2222ATT1G currently in stock?
What operating temperature range does NSVMMBT2222ATT1G support?
Availability (In Stock : 143 )
Quantity Unit Price Ext. Price
5+ $0.09924 $0.50
50+ $0.09709 $4.85
150+ $0.09565 $14.35
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ