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NSVMMBT6429LT1G  

Single Bipolar Transistors

The NSVMMBT6429LT1G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The NSVMMBT6429LT1G is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-terminal device that is designed to switch rapidly and efficiently, with low on-state resistance and fast switching times. The device is available in a surface-mount TO-263-2L package.

Features:

• N-channel, enhancement mode MOSFET
• High power switching capability
• Low on-state resistance (RDS(on))
• Fast switching times
• High input impedance
• Suitable for use in power switching and amplification applications

Applications:

The NSVMMBT6429LT1G is suitable for use in a variety of power electronics applications, including:

• Power switching and amplification in power electronics circuits
• Motor control and drive circuits
• Power supply circuits
• DC-to-DC converters
• High-power switching applications

In summary, the NSVMMBT6429LT1G is a high-power MOSFET transistor that is designed for use in power electronics circuits. It offers high power switching capability, low on-state resistance, and fast switching times, making it suitable for a range of applications, including motor control, power supplies, and DC-to-DC converters.

NSVMMBT6429LT1G Documents

Download datasheets and manufacturer documentation for NSVMMBT6429LT1G

PCN Assembly/Origin :

Compound Qual 14/Jun/2019      

Datasheets :

MMBT6428LT1, 6429LT1      

HTML Datasheet :

MMBT6428LT1, 6429LT1      

PCN Design/Specification :

Pd-Coated Cu Wire Update 23/Sep/2015       SOT23 27/Sep/2016      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration NSVMMBT6429LT1G