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NSVMMBT6429LT1G
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NSVMMBT6429LT1G Description
The NSVMMBT6429LT1G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.
Description:
The NSVMMBT6429LT1G is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-terminal device that is designed to switch rapidly and efficiently, with low on-state resistance and fast switching times. The device is available in a surface-mount TO-263-2L package.
Features:
- N-channel, enhancement mode MOSFET
- High power switching capability
- Low on-state resistance (RDS(on))
- Fast switching times
- High input impedance
- Suitable for use in power switching and amplification applications
Applications:
The NSVMMBT6429LT1G is suitable for use in a variety of power electronics applications, including:
- Power switching and amplification in power electronics circuits
- Motor control and drive circuits
- Power supply circuits
- DC-to-DC converters
- High-power switching applications
In summary, the NSVMMBT6429LT1G is a high-power MOSFET transistor that is designed for use in power electronics circuits. It offers high power switching capability, low on-state resistance, and fast switching times, making it suitable for a range of applications, including motor control, power supplies, and DC-to-DC converters.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.05764 | $5.76 |
| 300+ | $0.05113 | $15.34 |
| 3000+ | $0.04463 | $133.89 |
| 6000+ | $0.04073 | $244.38 |
| 9000+ | $0.03877 | $348.93 |



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