onsemi_NSVMMUN2113LT3G
original

onsemi
NSVMMUN2113LT3G

292-NSVMMUN2113LT3G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT), 10000-REEL

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Tech Specifications

Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
246mW
Mount
Surface Mount
Packaging
Tape and Reel
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NSVMMUN2113LT3G Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

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