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NSVMMUN2131LT1G
292-NSVMMUN2131LT1G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
8 Weeks
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Tech Specifications
Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
246mW
NSVMMUN2131LT1G Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
FAQ
What voltage specification is listed for NSVMMUN2131LT1G?
The listed voltage-related specification for NSVMMUN2131LT1G is 50V.
What is the mounting type of NSVMMUN2131LT1G?
What is NSVMMUN2131LT1G?
Is NSVMMUN2131LT1G currently in stock?
What package or case is NSVMMUN2131LT1G available in?
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