onsemi_NSVMMUN2131LT1G
original

onsemi
NSVMMUN2131LT1G

292-NSVMMUN2131LT1G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
8 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
246mW
Show More

NSVMMUN2131LT1G Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

FAQ

What voltage specification is listed for NSVMMUN2131LT1G?
The listed voltage-related specification for NSVMMUN2131LT1G is 50V.
What is the mounting type of NSVMMUN2131LT1G?
What is NSVMMUN2131LT1G?
Is NSVMMUN2131LT1G currently in stock?
What package or case is NSVMMUN2131LT1G available in?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ