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NSVMMUN2217LT1G
292-NSVMMUN2217LT1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
14 Weeks
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Tech Specifications
Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
246mW
NSVMMUN2217LT1G Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
FAQ
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Yes. NSVMMUN2217LT1G currently shows 4809 unit(s) in stock.
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