onsemi_NSVMMUN2232LT3G
original

onsemi
NSVMMUN2232LT3G

292-NSVMMUN2232LT3G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL
6 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
hFE Min
15
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
246mW
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NSVMMUN2232LT3G Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

FAQ

What voltage specification is listed for NSVMMUN2232LT3G?
The listed voltage-related specification for NSVMMUN2232LT3G is 50V.
Is NSVMMUN2232LT3G currently in stock?
What is the standard lead time for NSVMMUN2232LT3G?
What package or case is NSVMMUN2232LT3G available in?
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