onsemi_NSVMUN5132T1G
original

onsemi
NSVMUN5132T1G

292-NSVMUN5132T1G
PDF Datasheet
PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
12 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Package / Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
Height
0.9mm
hFE Min
15
Lead Free
Lead Free
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NSVMUN5132T1G Description

NSVMUN5132T1G Description

The NSVMUN5132T1G is a high-performance, single, pre-biased PNP bipolar transistor offered by onsemi. This device is designed for applications requiring low power and high efficiency. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, the NSVMUN5132T1G is well-suited for various electronic circuits. The device is surface-mountable, making it ideal for compact designs.

NSVMUN5132T1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Base resistor (R1): 4.7 kOhms
    • Emitter resistor (R2): 4.7 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250 mV @ 1mA, 10mA
    • Maximum power dissipation: 202 mW
    • DC current gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
    • Moisture sensitivity level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Low saturation voltage for high efficiency
    • Pre-biased design for ease of use in circuits
    • Surface-mount packaging for compact designs
  • Unique Advantages:

    • Active product status, ensuring ongoing availability and support
    • RoHS3 compliant, making it suitable for environmentally conscious applications
    • REACH unaffected, ensuring compliance with European regulations

NSVMUN5132T1G Applications

The NSVMUN5132T1G is ideal for various applications, including:

  • Low-power switching circuits: Its low saturation voltage and high efficiency make it suitable for power-sensitive applications.
  • Signal amplification: The device's high current gain and low power dissipation make it ideal for amplifying weak signals.
  • Automotive electronics: Its ability to handle high voltages and low power dissipation makes it suitable for automotive electronics, such as sensor interfaces and control systems.

Conclusion of NSVMUN5132T1G

The NSVMUN5132T1G is a versatile, pre-biased PNP bipolar transistor that offers high performance and reliability in various electronic applications. Its unique features, such as low saturation voltage and RoHS3 compliance, make it an excellent choice for designers looking for a high-quality, environmentally friendly solution. With its active product status and ongoing support from onsemi, the NSVMUN5132T1G is a reliable choice for your next project.

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Yes. NSVMUN5132T1G currently shows 2900 unit(s) in stock.
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