onsemi_NSVT65010MW6T1G
original

onsemi
NSVT65010MW6T1G

277-NSVT65010MW6T1G
PDF Datasheet
DUAL MATCHED PNP XSTR 65V, 3000-REEL
9 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
150
Number of Terminals
6
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
2
Lead Free
Yes
REACH
Compliant
Military Spec
False

NSVT65010MW6T1G Description

NSVT65010MW6T1G Description

The NSVT65010MW6T1G is a high-performance, dual PNP Bipolar Transistor Array manufactured by onsemi. This Surface Mount device is designed for applications requiring high frequency and power capabilities. With a maximum collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA, the NSVT65010MW6T1G is well-suited for a variety of electronic circuits.

NSVT65010MW6T1G Features

  • High Frequency Performance: The NSVT65010MW6T1G boasts a transition frequency of 100MHz, making it ideal for high-speed switching and amplification applications.
  • Low Saturation Voltage: With a Vce saturation voltage of just 650mV at 5mA and 100mA, this device offers high efficiency in low-voltage applications.
  • High DC Current Gain: The minimum hFE of 220 at 2mA and 5V ensures reliable and consistent performance.
  • Robust Power Handling: Capable of handling up to 380mW of power, the NSVT65010MW6T1G is suitable for demanding applications.
  • Low Leakage Current: The maximum collector cutoff current of 15nA (ICBO) contributes to low power consumption in standby modes.
  • Compliance: The NSVT65010MW6T1G is REACH unaffected and RoHS3 compliant, meeting stringent environmental standards.

NSVT65010MW6T1G Applications

The NSVT65010MW6T1G is an excellent choice for applications where high speed, low power consumption, and robust performance are critical. Some ideal use cases include:

  • Automotive Electronics: For power windows, seats, and other electronic control systems.
  • Industrial Control Systems: In motor control circuits and process automation.
  • Communication Equipment: As a switching or amplifying component in high-speed data transmission systems.
  • Consumer Electronics: In audio amplifiers, battery management systems, and other power-sensitive devices.

Conclusion of NSVT65010MW6T1G

The NSVT65010MW6T1G stands out for its combination of high frequency capability, low power consumption, and robust performance. Its compliance with environmental standards and versatility in applications make it a preferred choice for designers looking to enhance the performance of their electronic devices. With onsemi's reputation for quality, the NSVT65010MW6T1G is a reliable component for a wide range of applications in the electronics industry.

FAQ

What is NSVT65010MW6T1G?
NSVT65010MW6T1G is a Bipolar Transistor Arrays from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for NSVT65010MW6T1G?
Does NSVT65010MW6T1G have quantity-based pricing?
What operating temperature range does NSVT65010MW6T1G support?
Is NSVT65010MW6T1G currently in stock?
Availability (In Stock : 154 )
Quantity Unit Price Ext. Price
1+ $0.49028 $0.49
10+ $0.38057 $3.81
30+ $0.33428 $10.03
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