onsemi

NTBG015N065SC1

NTBG015N065SC1 Description

The NTBG015N065SC1 is a high-performance N-channel Silicon Carbide (SiC) MOSFET from onsemi, designed for demanding power electronics applications. With a 650V drain-to-source voltage (Vdss) and 145A continuous drain current (Id), it delivers robust power handling in a compact surface-mount package. Its ultra-low on-resistance (Rds(on)) of 18mΩ at 75A, 18V ensures minimal conduction losses, while the SiCFET technology provides superior thermal conductivity and switching efficiency compared to traditional silicon-based MOSFETs. The device is RoHS3 compliant and rated for 500W power dissipation (Tc), making it suitable for high-reliability environments.

NTBG015N065SC1 Features

• Advanced SiC Technology: Offers higher breakdown voltage, faster switching, and lower losses than silicon MOSFETs.
• Low Gate Charge (Qg): 283nC @ 18V reduces drive losses and improves efficiency in high-frequency applications.
• High Input Capacitance (Ciss): 4689pF @ 325V ensures stable switching performance under high-voltage conditions.
• Optimized Drive Voltage: Supports 15V–18V gate drive, balancing Rds(on) and switching speed.
• Robust Packaging: Tape & Reel (TR) for automated assembly, with MSL 1 (Unlimited) moisture sensitivity for extended shelf life.
• Wide Thermal Range: Suitable for high-temperature operation due to SiC’s inherent thermal stability.

NTBG015N065SC1 Applications

• Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from its high efficiency and thermal performance.
• Renewable Energy: Solar inverters and energy storage systems leverage its low-loss switching for higher power density.
• Industrial Power Supplies: Server PSUs, welding equipment, and motor drives utilize its high current capability and reliability.
• High-Frequency Converters: Telecom and datacenter power modules exploit its fast switching and low gate charge.

Conclusion of NTBG015N065SC1

The NTBG015N065SC1 stands out as a premium SiC MOSFET for high-power, high-efficiency applications. Its combination of low Rds(on), high current handling, and SiC thermal advantages makes it ideal for next-generation power electronics. Whether in EVs, renewables, or industrial systems, this device ensures superior performance, durability, and energy savings compared to conventional silicon alternatives.