onsemi_NTBGS002N06C
original

onsemi
NTBGS002N06C

278-NTBGS002N06C
PDF Datasheet
POWER MOSFET, 60 V, 2.2 M?, 211

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
62.1 nC @ 10 V
Product Status
Last Time Buy
Supplier Device Package
TO-263 (D2PAK)
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3.7W (Ta), 178W (Tc)
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
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NTBGS002N06C Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the NTBGS002N06C belongs to can be classified under the Discrete Semiconductors. NTBGS002N06C is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. NTBGS002N06C provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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