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NTBGS004N10G

The NTBGS004N10G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of high voltage applications, including motor control, power supplies, and power converters.

Description:

The NTBGS004N10G is an N-channel enhancement mode field effect transistor (FET) with a voltage rating of 1000V and a continuous drain current of 4.1A. It features a low on-state resistance (RDS(on)) of 0.85 ohms maximum at a gate-source voltage of 10V, making it suitable for use in high efficiency power conversion applications.

Features:

• High voltage rating of 1000V
• Continuous drain current of 4.1A
• Low on-state resistance (RDS(on)) of 0.85 ohms maximum at VGS = 10V
• Enhancement mode operation
• Suitable for use in high efficiency power conversion applications

Applications:

• Motor control
• Power supplies
• Power converters
• High voltage switching applications

The NTBGS004N10G is available in a TO-220 package, making it suitable for use in a variety of applications where high voltage and high efficiency are required. It is a reliable and cost-effective solution for a wide range of power conversion and control applications.