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NTD110N02RT4G

NTD110N02RT4G Description

The NTD110N02RT4G is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 24V and a continuous drain current (Id) of 12.5A at 25°C, this MOSFET is ideal for power management and motor control applications. The device is packaged in a DPAK package, making it suitable for surface mount applications.

NTD110N02RT4G Features

• High Input Capacitance (Ciss): The NTD110N02RT4G boasts a maximum input capacitance of 3440 pF at 20V, ensuring fast switching and reduced power loss.
• Low Gate Charge (Qg): With a maximum gate charge of 28 nC at 4.5V, this MOSFET minimizes switching losses and improves efficiency.
• Robust Power Dissipation: Capable of withstanding a maximum power dissipation of 1.5W at ambient temperature and 110W at case temperature, the NTD110N02RT4G is suitable for high-power applications.
• Low Rds On: The device offers a maximum Rds On of 4.6mOhm at 20A and 10V, contributing to high efficiency and low power loss.
• Compliance: The NTD110N02RT4G is REACH unaffected and RoHS3 compliant, making it an environmentally friendly choice for electronic designs.
• Moisture Sensitivity Level (MSL): With an MSL of 1, the device is suitable for applications with unlimited storage time before reflow soldering.

NTD110N02RT4G Applications

The NTD110N02RT4G is ideal for a variety of applications, including:

• Power Management: Its high efficiency and low power loss make it suitable for power supply designs.
• Motor Control: The device's high current handling capability and low Rds On make it ideal for motor control applications.
• Industrial Automation: The NTD110N02RT4G's robust power dissipation and high input capacitance make it suitable for industrial automation systems.
• Automotive Electronics: The device's compliance with REACH and RoHS3 standards, along with its high performance, make it suitable for automotive electronics applications.

Conclusion of NTD110N02RT4G

The NTD110N02RT4G is a high-performance N-Channel MOSFET from onsemi, offering a combination of high efficiency, low power loss, and robust power dissipation. Its unique features, such as high input capacitance and low gate charge, make it an ideal choice for power management, motor control, industrial automation, and automotive electronics applications. Despite being classified as obsolete, the NTD110N02RT4G remains a reliable and efficient solution for demanding electronic designs.