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NTD4806NT4G Description
NTD4806NT4G Description
The NTD4806NT4G is a high-performance MOSFET N-CH 30V device from onsemi, designed to deliver exceptional performance in a variety of applications. With a continuous drain current rating of 11.3A at 25°C and a peak drain current of 79A, this device is capable of handling demanding power requirements. The NTD4806NT4G is available in a DPAK package, making it ideal for surface mount applications.
NTD4806NT4G Features
- Technology: MOSFET (Metal Oxide) - This advanced technology offers high efficiency and low power consumption.
- Drain to Source Voltage (Vdss): 30V - Suitable for applications requiring high voltage handling.
- Current - Continuous Drain (Id): 11.3A (Ta), 79A (Tc) - Capable of handling high current loads.
- Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V - Offers low on-resistance for efficient power transfer.
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V - Minimizes switching losses and improves efficiency.
- Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V - Ensures fast switching speeds.
- Vgs (Max): ±20V - Provides flexibility in gate voltage requirements.
- Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for use in harsh environments.
- Mounting Type: Surface Mount - Ideal for compact, space-constrained designs.
NTD4806NT4G Applications
The NTD4806NT4G is well-suited for a variety of applications where high performance and reliability are critical. Some specific use cases include:
- Power Supplies: The high voltage and current ratings make it ideal for power supply designs.
- Motor Controls: Its ability to handle high current loads makes it suitable for motor control applications.
- Industrial Automation: The NTD4806NT4G's robust performance characteristics make it a good fit for industrial automation systems.
- Automotive Electronics: Its high voltage and current ratings, along with its robustness, make it suitable for automotive electronics applications.
Conclusion of NTD4806NT4G
The NTD4806NT4G is a high-performance MOSFET from onsemi that offers a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for applications requiring high efficiency and fast response times. While the device is now considered obsolete, it remains a reliable option for legacy systems and applications where its performance characteristics are still relevant.



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