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NTD4813NHT4G
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NTD4813NHT4G Description
The NTD4813NHT4G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.
Description:
The NTD4813NHT4G is an N-channel MOSFET transistor with a drain-to-source voltage (VDS) of 100V, a continuous drain current (ID) of 42A, and a pulsed drain current (IDSM) of 260A. It has a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.
Features:
- High-power MOSFET transistor
- N-channel, logic level gate
- 100V drain-to-source voltage (VDS)
- 42A continuous drain current (ID)
- 260A pulsed drain current (IDSM)
- Low on-state resistance (RDS(on)) of 4.5 milliohms maximum
- Suitable for use in a wide range of power electronic applications
Applications:
The NTD4813NHT4G is suitable for use in a variety of power electronic applications, including:
- Motor control
- Power supplies
- Renewable energy systems
- Battery management systems
- Inverters
- Switch mode power supplies (SMPS)
- Class D audio amplifiers
- High-efficiency power conversion systems
Overall, the NTD4813NHT4G is a high-power MOSFET transistor that offers excellent performance and reliability for a wide range of power electronic applications. Its low on-state resistance and high current handling capability make it an ideal choice for applications that require efficient and reliable power switching.



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