onsemi_NTD4813NHT4G
original

onsemi
NTD4813NHT4G

278-NTD4813NHT4G
PDF Datasheet
Single N-Channel Power MOSFET 30V, 40A, 13mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL

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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
16.1ns
Gate to Source Voltage (Vgs)
20V
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NTD4813NHT4G Description

The NTD4813NHT4G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NTD4813NHT4G is an N-channel MOSFET transistor with a drain-to-source voltage (VDS) of 100V, a continuous drain current (ID) of 42A, and a pulsed drain current (IDSM) of 260A. It has a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

  • High-power MOSFET transistor
  • N-channel, logic level gate
  • 100V drain-to-source voltage (VDS)
  • 42A continuous drain current (ID)
  • 260A pulsed drain current (IDSM)
  • Low on-state resistance (RDS(on)) of 4.5 milliohms maximum
  • Suitable for use in a wide range of power electronic applications

Applications:

The NTD4813NHT4G is suitable for use in a variety of power electronic applications, including:

  • Motor control
  • Power supplies
  • Renewable energy systems
  • Battery management systems
  • Inverters
  • Switch mode power supplies (SMPS)
  • Class D audio amplifiers
  • High-efficiency power conversion systems

Overall, the NTD4813NHT4G is a high-power MOSFET transistor that offers excellent performance and reliability for a wide range of power electronic applications. Its low on-state resistance and high current handling capability make it an ideal choice for applications that require efficient and reliable power switching.

FAQ

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