onsemi_NTD4860NT4G
original

onsemi
NTD4860NT4G

278-NTD4860NT4G
PDF Datasheet
Single N-Channel Power MOSFET 25V, 65A, 7.5mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
99 weeks

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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
7.5mR
Element Configuration
Single
Fall Time
2.3ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
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NTD4860NT4G Description

NTD4860NT4G Description

The NTD4860NT4G is a high-performance MOSFET (Metal Oxide) device manufactured by onsemi, designed to deliver exceptional performance in various electronic applications. This Single FET is characterized by its N-Channel, 25V drain-source voltage, and a continuous drain current of 10.4A at 25°C (Ta) and 65A at Tc. The device is obsolete, but it still offers significant benefits in terms of power dissipation, with a maximum of 1.28W at ambient temperature and 50W at case temperature. The NTD4860NT4G is packaged in a DPAK package and is surface mountable, making it suitable for a wide range of applications.

NTD4860NT4G Features

  • Technology: MOSFET (Metal Oxide), offering high efficiency and low power loss.
  • Input Capacitance (Ciss): Maximum of 1308 pF at 12V, ensuring fast switching and reduced power consumption.
  • Gate Charge (Qg): Maximum of 16.5 nC at 4.5V, contributing to low switching losses.
  • Drain to Source Voltage (Vdss): 25V, suitable for applications requiring high voltage tolerance.
  • Power Dissipation: 1.28W at ambient temperature and 50W at case temperature, indicating high thermal stability.
  • Rds On (Max): 7.5mOhm at 30A and 10V, providing low on-resistance for efficient power management.
  • Vgs(th) (Max): 2.5V at 250µA, ensuring reliable threshold voltage performance.
  • Current - Continuous Drain: 10.4A at 25°C (Ta) and 65A at Tc, catering to high current applications.
  • Drive Voltage: 4.5V for maximum Rds On and 10V for minimum Rds On, providing flexibility in circuit design.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture and suitable for various environments.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

NTD4860NT4G Applications

The NTD4860NT4G is ideal for applications that require high voltage, high current, and low power loss. Some specific use cases include:

  • Power Electronics: In power supply designs, the NTD4860NT4G can efficiently manage high currents and voltages.
  • Automotive Electronics: Due to its high current and voltage ratings, it is suitable for automotive applications such as electric power steering and battery management systems.
  • Industrial Control Systems: The device's robust performance makes it suitable for motor control and other industrial applications requiring high power management.

Conclusion of NTD4860NT4G

While the NTD4860NT4G is an obsolete product, it still offers a range of benefits for applications requiring high voltage, high current, and low power loss. Its high performance, combined with its compliance with environmental regulations and suitability for various environments, makes it a valuable component for legacy systems and specific applications where its unique features are required. Despite its obsolescence, the NTD4860NT4G remains a reliable choice for designers looking for a high-performance MOSFET in the specified parameters.

FAQ

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Yes. NTD4860NT4G currently has 3 pricing tier(s), starting from 1 units.
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Availability (In Stock : 19 )
Quantity Unit Price Ext. Price
1+ $0.84685 $0.85
10+ $0.82800 $8.28
30+ $0.81600 $24.48
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