onsemi

NTD4863NT4G

NTD4863NT4G Description

The NTD4863NT4G is a high-performance N-Channel MOSFET designed for power switching applications. With a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 9.2A at 25°C, this device offers excellent electrical performance. The NTD4863NT4G is manufactured by onsemi, a leading supplier of semiconductor solutions.

NTD4863NT4G Features

• High Drain-Source Voltage (Vdss): 25V, suitable for applications requiring high voltage handling.
• Continuous Drain Current (Id): 9.2A at 25°C and 49A at Tc, providing high current capability.
• Low Rds On (Max): 9.3mOhm at 30A, 10V, ensuring efficient power switching.
• Wide Vgs Range: ±20V, allowing for flexible gate voltage control.
• Low Vgs(th) (Max): 2.5V at 250µA, enabling easy gate drive.
• DPAK Package: Surface-mountable, suitable for high-density PCB designs.
• REACH Unaffected: Compliant with European chemical regulations.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in various environments.

NTD4863NT4G Applications

The NTD4863NT4G is ideal for a variety of power switching applications, including:

1. Power Supplies: Its high voltage and current ratings make it suitable for power supply designs.
2. Motor Control: The device's low Rds On and high current capability make it suitable for motor control applications.
3. Industrial Automation: The NTD4863NT4G's robust performance and high power dissipation ratings make it suitable for industrial automation systems.

Conclusion of NTD4863NT4G

The NTD4863NT4G is a versatile N-Channel MOSFET with high voltage and current ratings, making it suitable for a wide range of power switching applications. Its low Rds On and wide Vgs range provide efficient power switching and flexible gate control. While the device is now considered obsolete, it remains a reliable choice for applications requiring high performance and robustness.