onsemi

NTD5802NT4G

NTD5802NT4G Description

The NTD5802NT4G is a high-performance N-Channel MOSFET designed for demanding power management applications. Manufactured by onsemi, this device boasts superior technical specifications and performance benefits that set it apart from similar models. With a maximum drain-to-source voltage (Vdss) of 40V, continuous drain current (Id) of 16.4A at 25°C, and a power dissipation of up to 2.5W at ambient temperature, the NTD5802NT4G is ideal for applications requiring high efficiency and reliability.

NTD5802NT4G Features

• High Input Capacitance (Ciss): The NTD5802NT4G offers a maximum input capacitance of 5025 pF at 25V, ensuring fast switching and minimal signal distortion.
• Low Gate Charge (Qg): With a maximum gate charge of 100 nC at 10V, this MOSFET minimizes power losses during switching, improving overall efficiency.
• Robust Drain Current Handling: Capable of handling continuous drain currents of 16.4A at 25°C and 101A at case temperature, the NTD5802NT4G is well-suited for high-current applications.
• Low Rds On: The maximum Rds On of 4.4mOhm at 50A and 10V ensures low conduction losses and high efficiency in power conversion applications.
• Wide Operating Voltage Range: The NTD5802NT4G operates over a wide voltage range, with a maximum Vgs of ±20V and a Vgs(th) of 3.5V at 250µA, making it versatile for various power management scenarios.

NTD5802NT4G Applications

The NTD5802NT4G is ideal for a variety of applications where high efficiency, reliability, and performance are critical:

• Power Management Systems: Its high drain current and low Rds On make it suitable for power conversion and regulation in consumer electronics, industrial equipment, and automotive systems.
• Motor Drives: The NTD5802NT4G's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as electric vehicles and industrial robotics.
• Renewable Energy Systems: In solar inverters and wind power systems, the NTD5802NT4G's high efficiency and robustness contribute to the overall performance and reliability of the energy conversion process.

Conclusion of NTD5802NT4G

The NTD5802NT4G is a high-performance N-Channel MOSFET that offers exceptional technical specifications and performance benefits for demanding power management applications. Its unique features, such as high input capacitance, low gate charge, and robust drain current handling, make it a superior choice over similar models. With its wide operating voltage range and low Rds On, the NTD5802NT4G is well-suited for applications in power management systems, motor drives, and renewable energy systems. Despite being classified as obsolete, this MOSFET remains a valuable component for engineers seeking high efficiency and reliability in their designs.