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NTD60N02RT4G
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NTD60N02RT4G Description
NTD60N02RT4G Description
The NTD60N02RT4G is a high-performance N-Channel MOSFET from onsemi, designed for a wide range of applications. This device features a 25V drain-to-source voltage, 8.5A continuous drain current at 25°C, and a maximum power dissipation of 1.25W (ambient temperature) and 58W (case temperature). With a DPAK package and surface mount technology, the NTD60N02RT4G is optimized for space-constrained designs.
NTD60N02RT4G Features
- Technology: MOSFET (Metal Oxide) - Reliable and efficient power management
- Drain to Source Voltage (Vdss): 25V - Suitable for high-voltage applications
- Current - Continuous Drain (Id): 8.5A (Ta), 32A (Tc) - High current handling capability
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V - Low on-resistance for efficient power transfer
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V - Fast switching and low power consumption
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V - Minimizes capacitive effects
- Vgs (Max): ±20V - Robust gate voltage handling
- Moisture Sensitivity Level (MSL): 1 (Unlimited) - Resistant to moisture and humidity
- REACH Status: REACH Unaffected - Compliant with environmental regulations
NTD60N02RT4G Applications
The NTD60N02RT4G is ideal for applications requiring high efficiency, low power consumption, and robust performance. Some specific use cases include:
- Power Management: In power supply circuits, the NTD60N02RT4G's low on-resistance and high current handling capability make it suitable for efficient power distribution.
- Motor Control: The device's high drain current and voltage ratings make it an excellent choice for motor control applications, providing precise control and efficient operation.
- Industrial Automation: In industrial automation systems, the NTD60N02RT4G's robust performance and high power dissipation capabilities ensure reliable operation in demanding environments.
Conclusion of NTD60N02RT4G
The NTD60N02RT4G is a versatile and high-performance N-Channel MOSFET from onsemi, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, make it an ideal choice for applications requiring efficient power management and precise control. Despite its obsolescence, the NTD60N02RT4G remains a valuable option for designers looking to leverage its performance benefits in demanding applications.



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