onsemi_NTD6415ANLT4G
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onsemi
NTD6415ANLT4G

278-NTD6415ANLT4G
PDF Datasheet
N-Ch MOSFET, 100V, 23A, 52mΩ, DPAK, Logic Level
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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
23A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
52mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
71ns
Gate to Source Voltage (Vgs)
20V
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NTD6415ANLT4G Description

NTD6415ANLT4G Description

The NTD6415ANLT4G is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for applications requiring robust power management and efficient switching. With its N-CH 100V 23A DPAK package, this device offers a combination of low on-resistance and high current capability, making it ideal for a wide range of power electronic applications.

NTD6415ANLT4G Features

  • Input Capacitance (Ciss): The NTD6415ANLT4G boasts an ultra-low input capacitance of 1024 pF at 25 V, which contributes to its high-speed switching capabilities.
  • Gate Charge (Qg): With a maximum gate charge of 35 nC at 10 V, this MOSFET offers efficient gate drive requirements, reducing power loss during switching.
  • Drain to Source Voltage (Vdss): Capable of withstanding 100 V, this device is suitable for high-voltage applications.
  • Power Dissipation: The NTD6415ANLT4G can dissipate up to 83W, making it suitable for power-intensive applications.
  • Rds On (Max): The device has a low on-resistance of 52 mOhm at 10A and 10V, which minimizes power loss and improves efficiency.
  • Vgs(th) (Max): The threshold voltage of 2V at 250µA ensures reliable operation and consistent performance.
  • Current - Continuous Drain (Id): This MOSFET can handle a continuous drain current of 23A at 25°C, making it suitable for high-current applications.
  • Drive Voltage: The device operates with a maximum Rds On of 4.5V and a minimum Rds On of 10V, providing flexibility in driving the device.
  • Mounting Type: Surface mount technology allows for compact and efficient integration into circuit designs.
  • REACH Status: Being REACH unaffected, the NTD6415ANLT4G complies with the European Union's regulations concerning the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH).
  • RoHS Status: The device is ROHS3 compliant, adhering to the Restriction of Hazardous Substances in electronic products.

NTD6415ANLT4G Applications

The NTD6415ANLT4G is ideal for applications that require high efficiency and robust performance, such as:

  • Power Supplies: Due to its high current handling and low on-resistance, it is perfect for power supply designs.
  • Motor Controls: The device's high voltage and current ratings make it suitable for motor control applications.
  • Automotive Electronics: Its ability to handle high voltages and currents, along with its robust construction, makes it an excellent choice for automotive electronic systems.
  • Industrial Controls: The NTD6415ANLT4G can be used in various industrial control systems where high reliability and performance are critical.

Conclusion of NTD6415ANLT4G

The NTD6415ANLT4G from onsemi stands out for its combination of high voltage and current ratings, low on-resistance, and high efficiency. Its unique features, such as low input capacitance and gate charge, make it an excellent choice for high-speed switching applications. With its compliance to REACH and RoHS regulations, the NTD6415ANLT4G is not only a high-performance device but also an environmentally responsible choice for electronic design engineers.

FAQ

What is NTD6415ANLT4G?
NTD6415ANLT4G is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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