onsemi_NTF6P02T3G

onsemi
NTF6P02T3G  
Single FETs, MOSFETs

onsemi
NTF6P02T3G
278-NTF6P02T3G
Ersa
onsemi-NTF6P02T3G-datasheets-6356414.pdf
MOSFET P-CH 20V 10A SOT223
In Stock : 129647

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $0.77998
    • $0.78
    • 10+
    • $0.64253
    • $6.43
    • 30+
    • $0.57298
    • $17.19
    • 100+
    • $0.50508
    • $50.51
    • 500+
    • $0.43884
    • $219.42
    • 1000+
    • $0.41731
    • $417.31
    ADD TO CART
    QUICK ORDER
    $0.77998    $0.78
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    NTF6P02T3G Description

    The NTF6P02T3G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

    Description:

    The NTF6P02T3G is an N-channel enhancement mode field effect transistor (FET) with a drain-to-source voltage (VDS) of up to 60V and a continuous drain current (ID) of up to 49A. It features a low on-state resistance (RDS(on)) of 2.4mΩ max, which helps to minimize power dissipation and improve efficiency in high current applications.

    Features:

    • N-channel, enhancement mode MOSFET transistor
    • Drain-to-source voltage (VDS) of up to 60V
    • Continuous drain current (ID) of up to 49A
    • Low on-state resistance (RDS(on)) of 2.4mΩ max
    • Suitable for use in power electronic applications

    Applications:

    The NTF6P02T3G is suitable for use in a variety of power electronic applications, including:

    • Motor control
    • Power supplies
    • Energy management systems
    • Industrial control
    • Automotive applications

    Overall, the NTF6P02T3G is a high performance MOSFET transistor that offers excellent electrical characteristics and reliability, making it a popular choice for use in a wide range of power electronic applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Typical Diode Forward Voltage (V)
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NTF6P02T3G Documents

    Download datasheets and manufacturer documentation for NTF6P02T3G

    Ersa On Semiconductor - EOL 5-17-10 (PDF)      
    Ersa General Announcement - 2D Barcoding (PDF)       Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd.       Changing of Cover tape from 3M to Sumitomo for QFN/SOSM product range (PDF)       Change Notice (PDF)       Product Change Notification (PDF)      
    Ersa P Spice Model       Spice 2 Model       Spice 3 Model      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service