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NTGD4167CT1G

The NTGD4167CT1G is a high-performance gallium nitride (GaN) transistor offered by ON Semiconductor. It is designed for use in a wide range of power conversion applications, including industrial motor drives, power supplies, and renewable energy systems.

Description:

The NTGD4167CT1G is a normally-off enhancement-mode gallium nitride transistor. It features a high breakdown voltage of 150V, a low on-resistance of 4.7 mΩ, and a fast switching speed. The device is available in a 1G package, which is suitable for high-power applications.

Features:

• High breakdown voltage of 150V
• Low on-resistance of 4.7 mΩ
• Fast switching speed
• Normally-off enhancement-mode operation
• Suitable for high-power applications
• Available in a 1G package

Applications:

The NTGD4167CT1G is suitable for use in a variety of power conversion applications, including:

1. Industrial motor drives: The device's high breakdown voltage and low on-resistance make it well-suited for use in motor drive applications, where it can help to improve efficiency and reduce system size.
2. Power supplies: The NTGD4167CT1G can be used in power supply applications, such as in the design of power factor correction (PFC) circuits and DC-DC converters.
3. Renewable energy systems: The device's fast switching speed and low on-resistance make it an excellent choice for use in renewable energy systems, such as solar inverters and wind turbine converters.
4. Electric vehicles: The NTGD4167CT1G can be used in the design of electric vehicle (EV) charging systems and powertrains, where its high breakdown voltage and fast switching speed can help to improve system efficiency and performance.

Overall, the NTGD4167CT1G is a versatile and high-performance GaN transistor that offers excellent efficiency and performance for a wide range of power conversion applications. Its normally-off enhancement-mode operation and low on-resistance make it an ideal choice for designers looking to improve the efficiency and performance of their power conversion systems.