onsemi

NTH4L080N120SC1  

Single FETs, MOSFETs

NTH4L080N120SC1 Description

The NTH4L080N120SC1 from onsemi is a high-performance SiCFET (Silicon Carbide) N-channel MOSFET designed for demanding power electronics applications. With a 1200V drain-to-source voltage (Vdss) and 29A continuous drain current (Id) @ 25°C, this device delivers superior efficiency and reliability in high-voltage circuits. Its low on-resistance (Rds On) of 110mOhm @ 20A, 20V minimizes conduction losses, while the SiC technology ensures high-temperature stability and faster switching speeds compared to traditional silicon-based MOSFETs. Packaged in a TO247-4 through-hole format, it is optimized for robust thermal management and ease of integration.

NTH4L080N120SC1 Features

• Advanced SiCFET Technology: Enables higher efficiency, lower switching losses, and superior thermal performance.
• High Voltage & Current Handling: 1200V Vdss and 29A Id make it ideal for high-power applications.
• Low Gate Charge (Qg): 56 nC @ 20V reduces drive requirements and improves switching efficiency.
• Low Input Capacitance (Ciss): 1670 pF @ 800V enhances high-frequency performance.
• Wide Drive Voltage Range: 20V max Rds On ensures compatibility with various gate drivers.
• Robust Packaging: TO247-4 offers excellent thermal dissipation and mechanical durability.
• Compliance & Reliability: ROHS3 Compliant, REACH Unaffected, and MSL Not Applicable for harsh environments.

NTH4L080N120SC1 Applications

This MOSFET excels in applications requiring high-voltage switching and energy efficiency, such as:

• Electric Vehicle (EV) Chargers & Inverters: Leveraging SiC’s high-temperature stability and low losses.
• Solar & Renewable Energy Systems: Optimizing power conversion in PV inverters and MPPT controllers.
• Industrial Motor Drives: Enhancing efficiency in high-power motor control circuits.
• Switched-Mode Power Supplies (SMPS): Reducing losses in high-voltage DC-DC converters.
• Uninterruptible Power Supplies (UPS): Ensuring reliable performance in critical power backup systems.

Conclusion of NTH4L080N120SC1

The NTH4L080N120SC1 stands out as a high-efficiency, high-reliability SiC MOSFET, offering significant advantages over conventional silicon counterparts. Its low Rds On, fast switching, and robust thermal performance make it a top choice for next-generation power electronics. Whether in EV infrastructure, renewable energy, or industrial automation, this device delivers the performance and durability needed for cutting-edge applications.

NTH4L080N120SC1 Documents

Download datasheets and manufacturer documentation for NTH4L080N120SC1

Datasheets :

NTH4L080N120SC1      

PCN Packaging :

Packing quantity increase 28/Dec/2020      

HTML Datasheet :

NTH4L080N120SC1      

PCN Design/Specification :

Dimension/Color Change 24/Feb/2021      

Environmental Information :

onsemi RoHS       onsemi REACH