onsemi_NTHD4P02FT1G
original

onsemi
NTHD4P02FT1G

278-NTHD4P02FT1G
Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL
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Tech Specifications

Continuous Drain Current (ID)
2.2A
Current Rating
-3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
130MR
Fall Time
13ns
Gate to Source Voltage (Vgs)
12V
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NTHD4P02FT1G Description

NTHD4P02FT1G Description

The NTHD4P02FT1G is a high-performance MOSFET (Metal Oxide) manufactured by onsemi, designed for applications requiring efficient power management and control. This P-Channel MOSFET features a Schottky Diode, offering improved switching performance and reduced power loss. With a drain-source voltage rating of 20V and a continuous drain current of 2.2A at 25°C, the NTHD4P02FT1G is well-suited for a variety of electronic devices.

NTHD4P02FT1G Features

  • High Input Capacitance (Ciss): 300 pF @ 10 V, ensuring fast signal processing and minimal signal distortion.
  • Low Gate Charge (Qg): 6 nC @ 4.5 V, reducing switching losses and improving efficiency.
  • Surface Mount Technology: ChipFET™ package, ideal for compact and high-density designs.
  • Robust Power Dissipation: 1.1W (Tj), suitable for demanding applications with high thermal loads.
  • Compliance with Industry Standards: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • Low Rds On: 155mOhm @ 2.2A, 4.5V, contributing to high efficiency and low power loss in the ON state.
  • Wide Operating Voltage Range: Vgs (Max) of ±12V and Vgs(th) (Max) of 1.2V @ 250µA, providing flexibility in various circuit designs.

NTHD4P02FT1G Applications

The NTHD4P02FT1G is ideal for applications where high efficiency, low power loss, and compact design are critical. Some specific use cases include:

  1. Power Management Systems: In electronic devices requiring efficient power control and management, such as smartphones, laptops, and tablets.
  2. Automotive Electronics: For applications demanding high reliability and performance, such as engine control units and infotainment systems.
  3. Industrial Control Systems: In motor drives, power supplies, and other control systems where high efficiency and reliability are essential.

Conclusion of NTHD4P02FT1G

The NTHD4P02FT1G is a versatile and high-performance MOSFET, offering a combination of low power loss, high efficiency, and compact design. Its unique features, such as the Schottky Diode and low Rds On, make it an excellent choice for applications requiring high reliability and performance. Despite being classified as obsolete, the NTHD4P02FT1G remains a valuable option for designers looking for a reliable and efficient solution in their electronic devices.

FAQ

What voltage specification is listed for NTHD4P02FT1G?
The listed voltage-related specification for NTHD4P02FT1G is -20V.
What is the standard lead time for NTHD4P02FT1G?
What operating temperature range does NTHD4P02FT1G support?
Is NTHD4P02FT1G currently in stock?
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