onsemi_NTHL070N120M3S

onsemi
NTHL070N120M3S  
Single FETs, MOSFETs

onsemi
NTHL070N120M3S
278-NTHL070N120M3S
Ersa
onsemi-NTHL070N120M3S-datasheets-1722396.pdf
SIC MOS TO247-3L 70MOHM 1200V M3
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    NTHL070N120M3S Description

    The NTHL070N120M3S is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor drives, power supplies, and renewable energy systems.

    Description:

    The NTHL070N120M3S is a N-channel, high-power MOSFET transistor with a voltage rating of 1200V and a continuous current rating of 70A. It is housed in a TO-220 package, which is a popular and widely used package for power transistors.

    Features:

    • High voltage and current ratings: The NTHL070N120M3S has a voltage rating of 1200V and a continuous current rating of 70A, making it suitable for use in high-power applications.
    • Low on-state resistance: The on-state resistance (RDS(on)) of the NTHL070N120M3S is low, which helps to minimize power losses and improve efficiency in power electronic circuits.
    • High switching speed: The NTHL070N120M3S has a fast switching speed, which makes it suitable for use in high-frequency applications.
    • Robust protection features: The NTHL070N120M3S includes built-in protection features such as over-voltage, over-current, and over-temperature protection, which help to protect the device and the system in which it is used.

    Applications:

    The NTHL070N120M3S is suitable for use in a variety of power electronic applications, including:

    • Motor drives: The NTHL070N120M3S can be used in motor drive circuits to control the speed and torque of electric motors in industrial and automotive applications.
    • Power supplies: The NTHL070N120M3S can be used in power supply circuits to regulate the voltage and current supplied to a load.
    • Renewable energy systems: The NTHL070N120M3S can be used in renewable energy systems, such as solar power inverters and wind turbine converters, to convert and regulate the power generated by the renewable energy source.
    • Battery management systems: The NTHL070N120M3S can be used in battery management systems to regulate the charging and discharging of batteries in electric vehicles and energy storage systems.

    Overall, the NTHL070N120M3S is a high-power MOSFET transistor that offers high voltage and current ratings, low on-state resistance, and robust protection features, making it suitable for use in a wide range of power electronic applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Material
    Package Length
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Package Width
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    NTHL070N120M3S Documents

    Download datasheets and manufacturer documentation for NTHL070N120M3S

    Ersa Product Change Notification 2024-06-26 (PDF)      

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