onsemi_NTHL110N65S3F

onsemi
NTHL110N65S3F  
Single FETs, MOSFETs

onsemi
NTHL110N65S3F
278-NTHL110N65S3F
Ersa
onsemi-NTHL110N65S3F-datasheets-11808247.pdf
MOSFET N-CH 650V 30A TO247-3
In Stock : 10485

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NTHL110N65S3F Description

NTHL110N65S3F Description

The NTHL110N65S3F is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 650V and a continuous drain current of 30A at 25°C, this device is well-suited for a variety of power electronics applications.

NTHL110N65S3F Features

  • Technology: MOSFET (Metal Oxide), leveraging advanced semiconductor technology for reliable performance.
  • Input Capacitance (Ciss): Maximum 2560 pF at 400V, ensuring fast response times.
  • Gate Charge (Qg): Maximum 58 nC at 10V, contributing to efficient gate drive requirements.
  • Drain to Source Voltage (Vdss): 650V, suitable for high-voltage applications.
  • Power Dissipation (Max): 240W (Tc), capable of handling significant power loads.
  • Rds On (Max): 110mOhm at 15A, 10V, providing low on-resistance for reduced power loss.
  • Vgs(th) (Max): 5V at 3mA, facilitating threshold voltage management.
  • Mounting Type: Through Hole, offering a robust mechanical connection.
  • Package: Tube, providing protection and ease of handling during assembly.
  • REACH Status: REACH Unaffected, ensuring compliance with environmental regulations.
  • RoHS Status: ROHS3 Compliant, adhering to the latest environmental standards.

NTHL110N65S3F Applications

The NTHL110N65S3F is ideal for applications where high voltage and current handling are required, such as:

  • Power Supplies: In switch-mode power supplies (SMPS) for efficient energy conversion.
  • Motor Controls: For electric vehicles and industrial motor drives, providing precise control and high torque.
  • Renewable Energy Systems: In solar inverters and wind power converters, ensuring reliable energy harvesting.
  • Industrial Automation: For high-power switching in robotic systems and automated machinery.

Conclusion of NTHL110N65S3F

The NTHL110N65S3F stands out for its combination of high voltage and current ratings, low on-resistance, and compliance with environmental standards. Its through-hole mounting and tube packaging make it a reliable choice for applications demanding robust performance and ease of integration. Despite being marked as "Not For New Designs," it remains a viable option for existing designs that require its specific characteristics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NTHL110N65S3F Documents

Download datasheets and manufacturer documentation for NTHL110N65S3F

Ersa Mult Dev 16/Aug/2023      
Ersa NTHL110N65S3F      
Ersa Packing quantity increase 28/Dec/2020      
Ersa SuperFet Datasheet Chg 30/Jul/2019       Dimension/Color Change 24/Feb/2021      
Ersa onsemi RoHS       Material Declaration NTHL110N65S3F      

Shopping Guide

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