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NTJD4105CT1G

The NTJD4105CT1G is a high-power Darlington transistor from ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification.

Description:

The NTJD4105CT1G is a Darlington transistor that features a high current gain and a high power dissipation capability. It is available in a plastic TO-220 package, making it suitable for use in a wide range of applications.

Features:

• High current gain (hfe) of 15,000
• High power dissipation capability of up to 150 watts
• Collector-emitter voltage (Vce) of 100 volts
• Collector-base voltage (Vcb) of 200 volts
• Emitter-base voltage (Veb) of 5 volts
• Low saturation voltage (Vce(sat)) of 1.5 volts maximum
• High switching speed

Applications:

The NTJD4105CT1G is suitable for use in a variety of applications, including:

• Power switching in industrial and automotive systems
• Amplification in audio and video systems
• Motor control in robotics and automation systems
• Power supply in telecommunications equipment

Overall, the NTJD4105CT1G is a high-power Darlington transistor that offers high current gain and high power dissipation capability, making it a versatile and reliable choice for a wide range of applications.