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NTJD4105CT2G
289-NTJD4105CT2G
PDF Datasheet
Dual N/P-Channel JFET, SOT-363, 8V, 775mA, 220mR
37 Weeks
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Package/Case
SOT-363-6
Continuous Drain Current (ID)
775mA
Current Rating
630mA
Drain to Source Breakdown Voltage
-8V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
220mR
Element Configuration
Dual
NTJD4105CT2G Description
The NTJD4105CT2G is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification.
Description:
The NTJD4105CT2G is a Darlington transistor that features a high current gain and high power dissipation capability. It is available in a plastic package, making it suitable for use in a wide range of applications.
Features:
- High current gain (h_FE)
- High power dissipation capability
- Plastic package
Applications:
The NTJD4105CT2G is commonly used in power switching and amplification applications. Some specific uses include:
- Power amplifiers
- Switching regulators
- Motor control circuits
- Audio amplifiers
- Automotive applications
Overall, the NTJD4105CT2G is a versatile and high-performance Darlington transistor that is well-suited for a variety of applications requiring high current gain and power dissipation.
FAQ
What is the standard lead time for NTJD4105CT2G?
The standard lead time for NTJD4105CT2G is 37 Weeks.
What voltage specification is listed for NTJD4105CT2G?
Are there related or alternative parts for NTJD4105CT2G?
What is NTJD4105CT2G?
What package or case is NTJD4105CT2G available in?



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