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NTJD4105CT2G
289-NTJD4105CT2G
PDF Datasheet
Dual N/P-Channel JFET, SOT-363, 8V, 775mA, 220mR
37 Weeks
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Package/Case
SOT-363-6
Continuous Drain Current (ID)
775mA
Current Rating
630mA
Drain to Source Breakdown Voltage
-8V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
220mR
Element Configuration
Dual
NTJD4105CT2G Description
The NTJD4105CT2G is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification.
Description:
The NTJD4105CT2G is a Darlington transistor that features a high current gain and high power dissipation capability. It is available in a plastic package, making it suitable for use in a wide range of applications.
Features:
- High current gain (h_FE)
- High power dissipation capability
- Plastic package
Applications:
The NTJD4105CT2G is commonly used in power switching and amplification applications. Some specific uses include:
- Power amplifiers
- Switching regulators
- Motor control circuits
- Audio amplifiers
- Automotive applications
Overall, the NTJD4105CT2G is a versatile and high-performance Darlington transistor that is well-suited for a variety of applications requiring high current gain and power dissipation.
FAQ
What voltage specification is listed for NTJD4105CT2G?
The listed voltage-related specification for NTJD4105CT2G is -8V.
Is NTJD4105CT2G currently in stock?
Are there related or alternative parts for NTJD4105CT2G?
What package or case is NTJD4105CT2G available in?
What is the standard lead time for NTJD4105CT2G?



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