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NTJS3151PT1G  

Single FETs, MOSFETs

The NTJS3151PT1G is a high-performance N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and battery chargers.

Description:

The NTJS3151PT1G is a N-channel power MOSFET that features a low on-state resistance (RDS(on)) of 1.5 milliohms in the 2.8V to 4.0V gate drive voltage range. It also has a low input capacitance (Ciss) of 1.2 nanofarads, which allows for fast switching and reduced switching losses.

Features:

• N-channel power MOSFET
• Low on-state resistance (RDS(on)) of 1.5 milliohms
• Low input capacitance (Ciss) of 1.2 nanofarads
• High switching speed
• Low switching losses
• Suitable for use in power conversion applications

Applications:

• Motor control
• Power supplies
• Battery chargers
• DC-DC converters
• Inverters
• Class D audio amplifiers
• LED lighting

The NTJS3151PT1G is available in a TO-220 package, making it suitable for use in a variety of applications where space is limited. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.

NTJS3151PT1G Documents

Download datasheets and manufacturer documentation for NTJS3151PT1G

PCN Assembly/Origin :

Mult Dev A/Mat Chg 14/May/2021      

Datasheets :

NTJS3151P      

HTML Datasheet :

NTJS3151P      

Environmental Information :

onsemi RoHS       Material Declaration NTJS3151PT1G