onsemi

NTJS3151PT2G  

Single FETs, MOSFETs

NTJS3151PT2G Description

The NTJS3151PT2G from onsemi is a P-Channel MOSFET designed for high-efficiency power management in compact, low-voltage applications. With a 12V drain-to-source voltage (Vdss) and 2.7A continuous drain current (Id), this device is optimized for space-constrained designs, packaged in a SC88/SC70-6 surface-mount form factor. It features a low on-resistance (Rds On) of 60mOhm @ 3.3A, 4.5V, ensuring minimal power loss and improved thermal performance. The MOSFET operates with a gate threshold voltage (Vgs(th)) as low as 1.2V, making it compatible with modern low-voltage logic circuits.

NTJS3151PT2G Features

• Low Rds On: 60mOhm @ 4.5V ensures high efficiency in power switching.
• Compact & Lightweight: SC88/SC70-6 package ideal for portable and space-sensitive applications.
• Low Gate Charge (Qg): 8.6 nC @ 4.5V reduces switching losses, enhancing high-frequency performance.
• Wide Vgs Range: ±12V gate drive tolerance for robust operation.
• Low Input Capacitance (Ciss): 850 pF @ 12V minimizes gate drive requirements.
• RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
• High Power Dissipation: 625mW (Ta) ensures reliable thermal handling.

NTJS3151PT2G Applications

This MOSFET is ideal for:

• Battery-Powered Devices: Portable electronics, wearables, and IoT sensors due to low power loss.
• Load Switching: Power management in DC-DC converters, voltage regulators, and motor drivers.
• Signal Routing: Low-voltage analog/digital switching in communication systems.
• Consumer Electronics: Smartphones, tablets, and USB power delivery circuits.
• Automotive Modules: Auxiliary power control in infotainment and lighting systems.

Conclusion of NTJS3151PT2G

The NTJS3151PT2G stands out for its low Rds On, compact footprint, and efficient switching performance, making it a superior choice for modern low-voltage applications. Its high current handling, low gate drive requirements, and compliance with environmental standards ensure reliability in demanding designs. Whether for portable electronics, power management, or automotive systems, this MOSFET delivers optimal performance with minimal footprint and energy loss.

NTJS3151PT2G Documents

Download datasheets and manufacturer documentation for NTJS3151PT2G

PCN Assembly/Origin :

Mult Dev A/Mat Chg 14/May/2021      

Datasheets :

NTJS3151P      

HTML Datasheet :

NTJS3151P      

Environmental Information :

Material Declaration NTJS3151PT2G       onsemi RoHS       onsemi REACH