onsemi_NTJS3157NT1G
original

onsemi
NTJS3157NT1G

278-NTJS3157NT1G
PDF Datasheet
N-Channel JFET, 20V, 3.2A, 60mΩ, SOT-363
15 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
45MR
Element Configuration
Single
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NTJS3157NT1G Description

The NTJS3157NT1G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The NTJS3157NT1G is a N-channel MOSFET with a drain-to-source voltage (VDS) of up to 100V and a continuous drain current (ID) of up to 37A. It features a low on-state resistance (RDS(on)) of 55 milliohms (mΩ), which helps to minimize power dissipation and improve efficiency in power conversion applications.

Features:

  1. High voltage and current ratings: The NTJS3157NT1G can handle high voltage and current levels, making it suitable for use in demanding power electronic applications.
  2. Low on-state resistance: The low RDS(on) of the NTJS3157NT1G helps to minimize power dissipation and improve efficiency in power conversion applications.
  3. High switching speed: The NTJS3157NT1G has a fast switching speed, which allows it to operate efficiently in high-frequency applications.
  4. Integrated protection features: The NTJS3157NT1G includes built-in protection features such as over-temperature protection and over-current protection, which help to ensure the safe and reliable operation of the device.

Applications:

  1. Motor control: The NTJS3157NT1G can be used in motor control applications, such as in industrial automation systems and electric vehicles.
  2. Power supplies: The NTJS3157NT1G is suitable for use in power supply applications, such as in power adapters and chargers.
  3. Renewable energy systems: The NTJS3157NT1G can be used in renewable energy systems, such as solar panel inverters and wind turbine converters.
  4. Battery management systems: The NTJS3157NT1G can be used in battery management systems, such as in electric vehicles and portable electronic devices.

Overall, the NTJS3157NT1G is a high-performance MOSFET that offers excellent electrical characteristics and integrated protection features, making it suitable for use in a wide range of power electronic applications.

FAQ

What is the standard lead time for NTJS3157NT1G?
The standard lead time for NTJS3157NT1G is 15 Weeks.
Are there related or alternative parts for NTJS3157NT1G?
What operating temperature range does NTJS3157NT1G support?
What voltage specification is listed for NTJS3157NT1G?
Does NTJS3157NT1G have quantity-based pricing?
Availability (In Stock : 1399 )
Quantity Unit Price Ext. Price
5+ $0.33940 $1.70
50+ $0.27007 $13.50
150+ $0.24036 $36.05
500+ $0.20329 $101.64
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