onsemi_NTLGD3502NT1G
original

onsemi
NTLGD3502NT1G

289-NTLGD3502NT1G
PDF Datasheet
Dual N-Channel Power MOSFET 20V, DFN6 3*3 MM, 0.95 PITCH, 3000-REEL

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Tech Specifications

Package/Case
DFN
Continuous Drain Current (ID)
3.6A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Dual
Fall Time
17.5ns
FET Type
2 N-Channel
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NTLGD3502NT1G Description

Mosfet Array 20V 4.3A, 3.6A 1.74W Surface Mount 6-DFN (3x3)

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