onsemi_NTLJD3115PT1G
original

onsemi
NTLJD3115PT1G

289-NTLJD3115PT1G
PDF Datasheet
Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6
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Tech Specifications

Package/Case
DFN
Continuous Drain Current (ID)
3.3A
Current Rating
-4.1A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
100MR
Element Configuration
Dual
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NTLJD3115PT1G Description

NTLJD3115PT1G Description

The NTLJD3115PT1G is a high-performance MOSFET (Metal Oxide) device designed and manufactured by onsemi. This MOSFET is part of the FET, MOSFET Arrays category and is offered in a 6-pin DFN package. With a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C, the NTLJD3115PT1G is well-suited for various power management and switching applications.

NTLJD3115PT1G Features

  • Logic Level Gate: The NTLJD3115PT1G features a logic level gate, making it compatible with standard logic level inputs for easy integration into digital systems.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 531pF at 10V, the NTLJD3115PT1G offers fast switching performance and reduced power consumption.
  • Low Gate Charge: The device has a maximum gate charge (Qg) of 6.2nC at 4.5V, enabling efficient switching and minimizing power loss.
  • Low Rds On: The NTLJD3115PT1G boasts a low Rds On of 100mOhm at 2A and 4.5V, providing high efficiency in power switching applications.
  • Active Product Status: As an active product, the NTLJD3115PT1G is readily available and supported by onsemi, ensuring long-term supply and technical support.
  • Surface Mount Technology: The device is designed for surface mount applications, allowing for compact and efficient PCB layouts.
  • Compliance: The NTLJD3115PT1G is compliant with RoHS3 standards, making it suitable for environmentally conscious designs.

NTLJD3115PT1G Applications

The NTLJD3115PT1G is ideal for a variety of applications where high efficiency, fast switching, and low power consumption are critical:

  • Power Management: The device's low Rds On and high efficiency make it suitable for power management circuits in consumer electronics, such as smartphones, tablets, and laptops.
  • Motor Control: The NTLJD3115PT1G can be used in motor control applications, such as brushless DC motors in drones, robotics, and industrial automation systems.
  • Automotive: The device's robust performance and compliance with automotive standards make it suitable for use in automotive electronics, such as infotainment systems and powertrain control modules.
  • Industrial Control: The NTLJD3115PT1G can be used in industrial control systems, such as programmable logic controllers (PLCs) and motor drives, where high efficiency and reliability are essential.

Conclusion of NTLJD3115PT1G

The NTLJD3115PT1G is a versatile and high-performance MOSFET that offers a unique combination of low Rds On, fast switching, and low power consumption. Its compatibility with logic level inputs and surface mount technology make it an ideal choice for a wide range of applications in power management, motor control, automotive, and industrial control systems. With onsemi's backing and active product status, the NTLJD3115PT1G is a reliable and efficient solution for your next design.

FAQ

What operating temperature range does NTLJD3115PT1G support?
NTLJD3115PT1G has an operating temperature range of 150°C.
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