onsemi_NTLJD3119CTAG
original

onsemi
NTLJD3119CTAG

289-NTLJD3119CTAG
PDF Datasheet
Dual N/P-Channel MOSFET 20V 2.3A 65mR DFN

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
DFN
Continuous Drain Current (ID)
2.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
65MR
Dual Supply Voltage
20V
Element Configuration
Dual
Fall Time
13.2ns
Show More

NTLJD3119CTAG Description

NTLJD3119CTAG Description

The NTLJD3119CTAG is a MOSFET (Metal Oxide) device from onsemi, designed for high-performance applications. It features a N/P-CH configuration with a drain-source voltage (Vdss) of 20V and a maximum power rating of 6W. The device is packaged in a DFN (Dual Flat No-leads) package, making it suitable for surface mount applications. Although the product is now obsolete, it was designed to meet the highest industry standards.

NTLJD3119CTAG Features

  • Input Capacitance (Ciss): The maximum input capacitance is 271pF at 10V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): The maximum gate charge is 3.7nC at 4.5V, contributing to low power consumption and efficient operation.
  • Rds On (Max): The maximum on-resistance is 65mOhm at 3.8A and 4.5V, providing low conduction losses and high efficiency.
  • Vgs(th) (Max): The maximum threshold voltage is 1V at 250µA, ensuring reliable operation and consistent performance.
  • Current - Continuous Drain (Id): The device can handle a continuous drain current of 2.6A at 25°C, with a derated value of 2.3A.
  • FET Feature: The device features a logic level gate, making it compatible with logic level control signals.
  • Series: The NTLJD3119CTAG belongs to the µCool™ series, known for its excellent thermal performance and reliability.
  • REACH Status: The device is REACH unaffected, ensuring compliance with European chemical regulations.

NTLJD3119CTAG Applications

The NTLJD3119CTAG is ideal for applications that require high voltage, high current, and low power consumption. Some specific use cases include:

  1. Power Management: The device's high voltage and current ratings make it suitable for power management applications in consumer electronics, such as battery chargers and power supplies.
  2. Motor Control: The NTLJD3119CTAG can be used in motor control applications, where high voltage and current ratings are crucial for driving motors efficiently.
  3. Industrial Automation: The device's robustness and high power rating make it suitable for industrial automation applications, such as motor drives and control systems.

Conclusion of NTLJD3119CTAG

The NTLJD3119CTAG is a high-performance MOSFET device from onsemi, offering a combination of high voltage, high current, and low power consumption. Its unique features, such as the logic level gate and µCool™ series thermal performance, make it an ideal choice for demanding applications in power management, motor control, and industrial automation. Although the product is now obsolete, its technical specifications and performance benefits continue to make it a valuable option for legacy systems and applications where high reliability and efficiency are paramount.

FAQ

Are there related or alternative parts for NTLJD3119CTAG?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is NTLJD3119CTAG available in?
What operating temperature range does NTLJD3119CTAG support?
Is NTLJD3119CTAG currently in stock?
What voltage specification is listed for NTLJD3119CTAG?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ