onsemi_NTLJF4156NT1G
original

onsemi
NTLJF4156NT1G

278-NTLJF4156NT1G
PDF Datasheet
N-Ch MOSFET, 30V, 3.7A, 70mΩ, WDFN6
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Tech Specifications

Continuous Drain Current (ID)
3.7A
Current Rating
4.6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
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NTLJF4156NT1G Description

NTLJF4156NT1G Description

The NTLJF4156NT1G is a high-performance MOSFET (Metal Oxide) from onsemi, designed for applications requiring efficient power management and control. This N-Channel MOSFET offers a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 2.5A at 25°C. With a maximum power dissipation of 710mW, the NTLJF4156NT1G is well-suited for a variety of electronic devices.

NTLJF4156NT1G Features

  • High Input Capacitance (Ciss): The NTLJF4156NT1G boasts a maximum input capacitance of 427 pF at 15V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 6.5 nC at 4.5V, this MOSFET minimizes power loss and reduces switching times.
  • Robust Voltage Tolerance: Capable of withstanding a maximum gate-source voltage (Vgs) of ±8V, the NTLJF4156NT1G provides reliable operation in various electronic systems.
  • Efficient Power Dissipation: Designed to dissipate up to 710mW of power, this MOSFET is ideal for applications where heat management is crucial.
  • Surface Mount Technology: The NTLJF4156NT1G is available in a 6WDFN package, making it suitable for surface mount applications and。
  • Schottky Diode Feature: Incorporating an isolated Schottky diode, this MOSFET offers improved efficiency and performance in switching applications.

NTLJF4156NT1G Applications

The NTLJF4156NT1G is an excellent choice for a variety of applications, including:

  • Power Management Systems: Its high voltage and current ratings make it suitable for managing power in electronic devices.
  • Motor Control Applications: The low Rds On and high current capabilities make it ideal for controlling motors in various industrial and consumer products.
  • Automotive Electronics: The NTLJF4156NT1G can be used in automotive electronics for power control and management, benefiting from its robust design and high efficiency.
  • Telecommunications Equipment: In telecommunications, this MOSFET can be used for signal processing and power control, taking advantage of its fast switching speeds and low gate charge.

Conclusion of NTLJF4156NT1G

The NTLJF4156NT1G from onsemi is a versatile and powerful MOSFET, offering a combination of high voltage and current ratings, low gate charge, and efficient power dissipation. Its unique features, such as the Schottky diode and high input capacitance, make it an ideal choice for a wide range of applications, from power management to motor control. With its robust design and compliance with industry standards like RoHS3 and REACH, the NTLJF4156NT1G is a reliable and efficient solution for modern electronic systems.

FAQ

What operating temperature range does NTLJF4156NT1G support?
NTLJF4156NT1G has an operating temperature range of 150°C.
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