onsemi_NTMD6601NR2G
original

onsemi
NTMD6601NR2G

289-NTMD6601NR2G
PDF Datasheet
Power MOSFET 80V 1.4A 245 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
1.1A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
80V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
15V
Input Capacitance
400pF
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NTMD6601NR2G Description

Mosfet Array 80V 1.1A 600mW Surface Mount 8-SOIC

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