onsemi_NTMD6N02R2G
original

onsemi
NTMD6N02R2G

289-NTMD6N02R2G
PDF Datasheet
Dual N-Ch MOSFET 20V 6.5A 35mR SOIC-8
8 Weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Current Rating
6A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
35MR
Element Configuration
Dual
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NTMD6N02R2G Description

NTMD6N02R2G Description

The NTMD6N02R2G is a high-performance MOSFET (Metal Oxide) device from onsemi, designed for use in a variety of electronic applications. This device is part of the FET, MOSFET Arrays category and offers several unique features and advantages over similar models. With its compact 8SOIC package and surface mount technology, the NTMD6N02R2G is ideal for space-constrained designs.

NTMD6N02R2G Features

  • Logic Level Gate: The NTMD6N02R2G features a logic level gate, allowing it to interface directly with logic level signals without the need for additional level shifting circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 1100pF @ 16V, the NTMD6N02R2G offers fast switching speeds and low power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) of 20nC @ 4.5V ensures efficient gate driving and reduced power dissipation.
  • Low Rds On: The NTMD6N02R2G has a low Rds On of 35mOhm @ 6A, 4.5V, providing high efficiency and low conduction losses.
  • High Drain to Source Voltage: With a Vdss of 20V, the NTMD6N02R2G can handle high voltage applications.
  • Continuous Drain Current: The device can handle a continuous drain current (Id) of 3.92A @ 25°C, making it suitable for high current applications.
  • RoHS3 Compliant: The NTMD6N02R2G is compliant with the RoHS3 directive, ensuring environmental compliance and reducing the risk of obsolescence.

NTMD6N02R2G Applications

The NTMD6N02R2G is ideal for a variety of applications, including:

  • Power Management: Due to its high current and voltage ratings, the NTMD6N02R2G is well-suited for power management applications, such as power converters and battery management systems.
  • Motor Control: The device's low Rds On and high current rating make it an excellent choice for motor control applications, where efficiency and power handling are critical.
  • Automotive Applications: The NTMD6N02R2G's high voltage and current ratings, along with its compact package, make it suitable for automotive applications, such as electric vehicle charging systems and power electronics.
  • Industrial Control: The device's robust performance and reliability make it ideal for industrial control applications, where high power handling and fast switching speeds are required.

Conclusion of NTMD6N02R2G

The NTMD6N02R2G from onsemi is a versatile and high-performance MOSFET device that offers several advantages over similar models. Its unique combination of low input capacitance, low gate charge, and high current and voltage ratings make it ideal for a wide range of applications, including power management, motor control, automotive, and industrial control. With its RoHS3 compliance and compact 8SOIC package, the NTMD6N02R2G is a reliable and environmentally friendly choice for demanding electronic designs.

FAQ

Is NTMD6N02R2G currently in stock?
Yes. NTMD6N02R2G currently shows 2578 unit(s) in stock.
What operating temperature range does NTMD6N02R2G support?
What voltage specification is listed for NTMD6N02R2G?
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Availability (In Stock : 2578 )
Quantity Unit Price Ext. Price
10+ $0.55885 $5.59
30+ $0.52628 $15.79
100+ $0.49372 $49.37
500+ $0.47485 $237.43
1000+ $0.46457 $464.57
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