onsemi_NTMFS006N12MCT1G

onsemi
NTMFS006N12MCT1G  
Single FETs, MOSFETs

onsemi
NTMFS006N12MCT1G
278-NTMFS006N12MCT1G
Ersa
onsemi-NTMFS006N12MCT1G-datasheets-2868076.pdf
POWER MOSFET, 120V SINGLE N CHAN
In Stock : 24475

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NTMFS006N12MCT1G Description

NTMFS006N12MCT1G Description

The NTMFS006N12MCT1G is a high-performance, single N-channel power MOSFET from onsemi. This MOSFET is designed for applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage of 120V and a continuous drain current of up to 15A at 25°C, the NTMFS006N12MCT1G is ideal for use in a variety of power electronics applications.

NTMFS006N12MCT1G Features

  • High Drain-to-Source Voltage (Vdss): 120V, making it suitable for high-voltage applications.
  • Low On-Resistance (Rds On): 6mOhm at 46A and 10V, reducing power losses and improving efficiency.
  • High Continuous Drain Current (Id): 15A at 25°C and 93A at Tc, providing high current handling capability.
  • Low Gate Threshold Voltage (Vgs(th)): 4V at 260µA, enabling easy gate drive.
  • Low Input Capacitance (Ciss): 3365 pF at 60V, reducing switching losses and improving efficiency.
  • Low Gate Charge (Qg): 42 nC at 10V, reducing switching losses and improving efficiency.
  • **Surface Mount Packaging:**PCB。
  • Compliance with RoHS3 and REACH: Ensuring environmental compliance and reducing the risk of regulatory non-compliance.

NTMFS006N12MCT1G Applications

The NTMFS006N12MCT1G is ideal for a variety of power electronics applications, including:

  • Power Supplies: Due to its high voltage and current ratings, it is suitable for use in power supply designs.
  • Motor Controls: Its low on-resistance and high current capability make it suitable for motor control applications.
  • Automotive Electronics: The high voltage rating and compliance with environmental regulations make it suitable for automotive electronics applications.
  • Industrial Controls: Its robustness and high power dissipation capability make it suitable for use in industrial control systems.

Conclusion of NTMFS006N12MCT1G

The NTMFS006N12MCT1G from onsemi is a high-performance, single N-channel power MOSFET that offers a combination of high voltage, low on-resistance, and low gate charge. Its surface mount packaging and compliance with environmental regulations make it an ideal choice for a variety of power electronics applications. With its unique features and advantages, the NTMFS006N12MCT1G stands out from similar models and provides a reliable solution for high-power applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Mounting Style
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

NTMFS006N12MCT1G Documents

Download datasheets and manufacturer documentation for NTMFS006N12MCT1G

Ersa NTMFS006N12MC      
Ersa NTMFS006N12MC      
Ersa onsemi RoHS       onsemi REACH      

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