onsemi
NTMFS3D2N10MDT1G

278-NTMFS3D2N10MDT1G
PDF Datasheet
PTNG 100V LOW Q3.2MOHM N-FET, HE
26 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
39
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
71.3 nC @ 10 V
Typical Rise Time (ns)
7.2
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
26.1
Show More

NTMFS3D2N10MDT1G Description

NTMFS3D2N10MDT1G Description

The NTMFS3D2N10MDT1G from onsemi is a high-performance N-channel MOSFET designed for power management applications requiring low on-resistance and high efficiency. With a 100V drain-to-source voltage (Vdss) rating, it delivers 19A continuous drain current (Id) at 25°C (Ta) and up to 142A (Tc), making it suitable for high-current scenarios. The device features an ultra-low Rds(on) of 3.5mΩ at 50A, 10V, minimizing conduction losses and improving thermal performance. Its PowerTrench® technology ensures superior switching efficiency, while the 3900pF input capacitance (Ciss) and 71.3nC gate charge (Qg) contribute to reduced switching losses. Packaged in a surface-mount format (Tape & Reel), it is ideal for automated assembly processes.

NTMFS3D2N10MDT1G Features

  • Low Rds(on): 3.5mΩ @ 50A, 10V for minimized power dissipation.
  • High Current Handling: 142A (Tc) and 19A (Ta) continuous drain current.
  • Fast Switching: Optimized gate charge (71.3nC @ 10V) and low Ciss for efficient high-frequency operation.
  • Robust Voltage Ratings: 100V Vdss and ±20V Vgs(max) for reliable performance in demanding environments.
  • Thermal Efficiency: 155W (Tc) power dissipation capability ensures stability under high loads.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) for global usability.

NTMFS3D2N10MDT1G Applications

This MOSFET excels in applications requiring high efficiency and low conduction losses, such as:

  • DC-DC Converters: Ideal for synchronous rectification due to low Rds(on).
  • Motor Drives: Handles high inrush currents in automotive and industrial systems.
  • Power Supplies: Suitable for server, telecom, and computing PSUs.
  • Battery Management Systems (BMS): Efficient power switching in EV/HEV applications.
  • Load Switches: Low gate drive requirements simplify control circuitry.

Conclusion of NTMFS3D2N10MDT1G

The NTMFS3D2N10MDT1G stands out for its ultra-low on-resistance, high current capability, and thermal robustness, making it a top choice for power electronics designers. Its PowerTrench® technology and optimized switching characteristics ensure superior performance in high-frequency, high-efficiency applications. Whether used in automotive, industrial, or computing systems, this MOSFET delivers reliability and efficiency, backed by onsemi’s quality assurance.

FAQ

What package or case is NTMFS3D2N10MDT1G available in?
NTMFS3D2N10MDT1G is available in the 8-PowerTDFN, 5 Leads package / case.
What is NTMFS3D2N10MDT1G?
What is the standard lead time for NTMFS3D2N10MDT1G?
Is NTMFS3D2N10MDT1G currently in stock?
What operating temperature range does NTMFS3D2N10MDT1G support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ