onsemi_NTMFS4834NT1G
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onsemi
NTMFS4834NT1G

278-NTMFS4834NT1G
PDF Datasheet
Single N-Channel Power MOSFET 30V, 130A, 3mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

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Tech Specifications

Package/Case
DFN
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3MR
Element Configuration
Single
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
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NTMFS4834NT1G Description

NTMFS4834NT1G Description

The NTMFS4834NT1G from onsemi is an N-channel MOSFET designed for high-efficiency power management applications. With a 30V drain-to-source voltage (Vdss) and continuous drain current (Id) ratings of 13A (Ta) / 130A (Tc), this device offers robust performance in compact 5DFN surface-mount packaging. It features an ultra-low on-resistance (Rds(on)) of 3mOhm at 30A, 10V, minimizing conduction losses and improving thermal efficiency. The MOSFET operates with a gate threshold voltage (Vgs(th)) of 2.5V max @ 250µA, making it compatible with standard logic-level drive circuits.

NTMFS4834NT1G Features

  • Low Rds(on): 3mOhm @ 30A, 10V ensures high current handling with minimal power dissipation.
  • High Current Capability: Supports 130A (Tc) for demanding power applications.
  • Optimized Gate Charge (Qg): 48nC @ 4.5V reduces switching losses, enhancing efficiency in high-frequency circuits.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive requirements.
  • Thermal Performance: Power dissipation up to 86.2W (Tc) with efficient heat dissipation.
  • Compact 5DFN Package: Space-saving design ideal for high-density PCB layouts.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory standards.

NTMFS4834NT1G Applications

This MOSFET is optimized for:

  • DC-DC Converters: High-efficiency buck/boost regulators in computing and telecom systems.
  • Motor Control: Low-loss switching in brushed/brushless motor drives.
  • Power Management: Load switches, battery protection, and hot-swap circuits.
  • Automotive Systems: Auxiliary power distribution and LED drivers.
  • Portable Electronics: Space-constrained applications requiring high current density.

Conclusion of NTMFS4834NT1G

The NTMFS4834NT1G combines low Rds(on), high current capability, and compact packaging, making it an excellent choice for power-efficient designs. Its low gate charge and thermal performance are ideal for high-frequency switching, while the 5DFN package suits modern miniaturized electronics. Though marked obsolete, its specifications remain competitive for legacy or niche applications requiring reliable, high-performance MOSFETs. Designers should verify availability or consider onsemi's newer alternatives for future-proof solutions.

FAQ

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NTMFS4834NT1G is available in the DFN package / case.
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