onsemi_NTMFS4933NT1G
original

onsemi
NTMFS4933NT1G

278-NTMFS4933NT1G
PDF Datasheet
Single N-Channel Power MOSFET 30V, 210A, 1.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

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Tech Specifications

Package/Case
DFN
Continuous Drain Current (ID)
210A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2mR
Element Configuration
Single
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
10.93nF
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NTMFS4933NT1G Description

NTMFS4933NT1G Description

The NTMFS4933NT1G is a high-performance MOSFET N-CH 30V 20A/210A 5DFN manufactured by onsemi, a leading supplier of semiconductor solutions. This single FET is designed for applications requiring high power dissipation, low on-resistance, and fast switching capabilities. With a maximum drain-source voltage (Vdss) of 30V and continuous drain current (Id) of 20A at 25°C, the NTMFS4933NT1G delivers exceptional performance in demanding electronic systems.

NTMFS4933NT1G Features

  • High Power Dissipation: The NTMFS4933NT1G can handle a maximum power dissipation of 1.06W at ambient temperature (Ta) and 104W at case temperature (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds On of 1.2mOhm at 30A and 10V, the NTMFS4933NT1G offers low on-resistance for efficient power delivery.
  • Fast Switching Speed: The device has a maximum gate charge (Qg) of 62.1nC at 4.5V and a threshold voltage (Vgs(th)) of 2.2V at 250µA, enabling fast switching and reduced power loss.
  • Robust Package: The 5DFN package provides excellent thermal performance and mechanical stability, ensuring reliable operation in harsh environments.
  • Compliance: The NTMFS4933NT1G is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, making it environmentally friendly and suitable for various applications.

NTMFS4933NT1G Applications

The NTMFS4933NT1G is ideal for a wide range of applications, including:

  1. Power Management: Due to its high power dissipation and low on-resistance, the NTMFS4933NT1G is suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
  2. Motor Control: The fast switching capabilities and low on-resistance make it an excellent choice for motor control applications, such as electric vehicles, robotics, and industrial automation.
  3. RF Power Amplifiers: The NTMFS4933NT1G can be used in RF power amplifiers for wireless communication systems, providing efficient power delivery and fast switching.
  4. Battery Management Systems: The device's high current handling capability and low on-resistance make it suitable for battery management systems in electric vehicles and energy storage systems.

Conclusion of NTMFS4933NT1G

The NTMFS4933NT1G is a versatile and high-performance MOSFET designed for demanding applications requiring high power dissipation, low on-resistance, and fast switching capabilities. Its unique features, such as high power dissipation, low on-resistance, and fast switching speed, make it an ideal choice for power management, motor control, RF power amplifiers, and battery management systems. Despite being an obsolete product, the NTMFS4933NT1G remains a reliable and efficient solution for various high-power electronic systems.

FAQ

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The listed voltage-related specification for NTMFS4933NT1G is 30V.
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