onsemi

NTMFS4946NT1G

NTMFS4946NT1G Description

The NTMFS4946NT1G is a high-performance N-Channel MOSFET from onsemi, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 30V and continuous drain current ratings of 12.7A at 25°C ambient temperature and 100A at case temperature, this MOSFET is well-suited for power electronics and motor control applications.

NTMFS4946NT1G Features

• High Input Capacitance (Ciss): The NTMFS4946NT1G boasts a maximum input capacitance of 3250 pF at 12V, ensuring fast charging and discharging of the gate for swift switching.
• Low Gate Charge (Qg): With a maximum gate charge of 53 nC at 11.5V, this MOSFET minimizes power loss during switching, contributing to higher efficiency.
• Surface Mount Technology: The 5DFN package allows for compact and efficient integration into surface-mount applications.
• Robust Power Dissipation: Capable of dissipating up to 890mW at ambient temperature and 55.5W at case temperature, making it suitable for high-power applications.
• Compliance with Industry Standards: The NTMFS4946NT1G is REACH unaffected and RoHS3 compliant, aligning with environmental and safety regulations.

NTMFS4946NT1G Applications

The NTMFS4946NT1G is ideal for applications where high power handling and efficient switching are critical:

• Power Electronics: In power supplies and converters where high voltage and current ratings are necessary.
• Motor Control: For driving motors in industrial and automotive applications, leveraging its high current and voltage capabilities.
• Automotive Systems: In various automotive electronic systems that require robust MOSFETs for reliable performance.

Conclusion of NTMFS4946NT1G

While the NTMFS4946NT1G is now considered obsolete, it was a high-performing MOSFET with features that made it suitable for demanding power electronic applications. Its high input capacitance, low gate charge, and robust power dissipation capabilities provided advantages over similar models in terms of efficiency and performance. Despite its obsolescence, it remains a reference for the performance standards that modern MOSFETs should meet, particularly in high-power applications.