


Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
NTMFS4C022NAT1G Description
NTMFS4C022NAT1G Description
The NTMFS4C022NAT1G is a high-performance N-Channel MOSFET designed and manufactured by onsemi. This device is part of the Single FETs category and is specifically categorized as a MOSFET. It offers a range of technical specifications that make it suitable for various applications in the electronics industry.
NTMFS4C022NAT1G Features
- Technology: MOSFET (Metal Oxide) - This technology offers high efficiency and low power consumption, making it ideal for power management applications.
- Drain to Source Voltage (Vdss): 30 V - This high voltage rating allows the device to handle a wide range of applications, including those requiring high voltage tolerance.
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) - The device can handle high continuous drain currents, making it suitable for high-power applications.
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V - This low on-resistance ensures efficient power transfer with minimal power loss.
- Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V - The low gate charge contributes to faster switching speeds and reduced power consumption.
- Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V - The low input capacitance helps in achieving faster switching times.
- Vgs(th) (Max) @ Id: 2.2V @ 250µA - This ensures reliable operation at low gate-source voltages.
- Vgs (Max): ±20V - The device can handle high gate-source voltages, providing flexibility in circuit design.
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V - This allows for efficient gate drive and control.
- Power Dissipation (Max): 3.1W (Ta), 64W (Tc) - The device can dissipate high power, making it suitable for high-power applications.
- Mounting Type: Surface Mount - This mounting type is ideal for compact and space-constrained applications.
- Package: Tape & Reel (TR) - This packaging option is convenient for automated assembly processes.
NTMFS4C022NAT1G Applications
The NTMFS4C022NAT1G is ideal for a variety of applications due to its high voltage and current ratings, low on-resistance, and fast switching capabilities. Some specific use cases include:
- Power Management: Due to its high voltage and current ratings, the device is suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
- Motor Control: The low on-resistance and high current ratings make it ideal for motor control applications, where efficient power transfer and control are critical.
- Switching Applications: The fast switching capabilities and low gate charge make it suitable for high-speed switching applications, such as in power supplies and converters.
Conclusion of NTMFS4C022NAT1G
The NTMFS4C022NAT1G is a versatile and high-performance N-Channel MOSFET that offers a range of technical specifications and features that make it suitable for a variety of applications in the electronics industry. Its unique combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an ideal choice for power management, motor control, and switching applications. With its surface mount packaging and tape & reel option, the device is also well-suited for automated assembly processes, making it a cost-effective and efficient solution for high-volume production.



.png)














.png?x-oss-process=image/format,webp/resize,h_32)










