onsemi_NTMFS4C022NAT1G
onsemi_NTMFS4C022NAT1G
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onsemi
NTMFS4C022NAT1G

278-NTMFS4C022NAT1G
MOSFET N-CH 30V 5DFN

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
45.2 nC @ 10 V
Mounting Type
Surface Mount
Product Status
Last Time Buy
Rds On (Max) @ Id, Vgs
1.7mOhm @ 30A, 10V
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NTMFS4C022NAT1G Description

NTMFS4C022NAT1G Description

The NTMFS4C022NAT1G is a high-performance N-Channel MOSFET designed and manufactured by onsemi. This device is part of the Single FETs category and is specifically categorized as a MOSFET. It offers a range of technical specifications that make it suitable for various applications in the electronics industry.

NTMFS4C022NAT1G Features

  • Technology: MOSFET (Metal Oxide) - This technology offers high efficiency and low power consumption, making it ideal for power management applications.
  • Drain to Source Voltage (Vdss): 30 V - This high voltage rating allows the device to handle a wide range of applications, including those requiring high voltage tolerance.
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) - The device can handle high continuous drain currents, making it suitable for high-power applications.
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V - This low on-resistance ensures efficient power transfer with minimal power loss.
  • Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V - The low gate charge contributes to faster switching speeds and reduced power consumption.
  • Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V - The low input capacitance helps in achieving faster switching times.
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA - This ensures reliable operation at low gate-source voltages.
  • Vgs (Max): ±20V - The device can handle high gate-source voltages, providing flexibility in circuit design.
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V - This allows for efficient gate drive and control.
  • Power Dissipation (Max): 3.1W (Ta), 64W (Tc) - The device can dissipate high power, making it suitable for high-power applications.
  • Mounting Type: Surface Mount - This mounting type is ideal for compact and space-constrained applications.
  • Package: Tape & Reel (TR) - This packaging option is convenient for automated assembly processes.

NTMFS4C022NAT1G Applications

The NTMFS4C022NAT1G is ideal for a variety of applications due to its high voltage and current ratings, low on-resistance, and fast switching capabilities. Some specific use cases include:

  • Power Management: Due to its high voltage and current ratings, the device is suitable for power management applications in consumer electronics, industrial equipment, and automotive systems.
  • Motor Control: The low on-resistance and high current ratings make it ideal for motor control applications, where efficient power transfer and control are critical.
  • Switching Applications: The fast switching capabilities and low gate charge make it suitable for high-speed switching applications, such as in power supplies and converters.

Conclusion of NTMFS4C022NAT1G

The NTMFS4C022NAT1G is a versatile and high-performance N-Channel MOSFET that offers a range of technical specifications and features that make it suitable for a variety of applications in the electronics industry. Its unique combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an ideal choice for power management, motor control, and switching applications. With its surface mount packaging and tape & reel option, the device is also well-suited for automated assembly processes, making it a cost-effective and efficient solution for high-volume production.

FAQ

What is NTMFS4C022NAT1G?
NTMFS4C022NAT1G is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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