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NTMFS4C029NT1G

NTMFS4C029NT1G is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a N-channel enhancement mode device that is designed for high voltage applications.

Description:

The NTMFS4C029NT1G is a high voltage MOSFET that features a drain-to-source voltage (VDS) of -500V and a continuous drain current (ID) of 29A. It has a low on-state resistance (RDS(on)) of 55mOhm max, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2.5V min.

Features:

• N-channel, enhancement mode
• VDS of -500V
• ID of 29A
• RDS(on) of 55mOhm max
• Fast switching speed
• Qg of 44nC
• VGS(th) of 2.5V min
• Suitable for high voltage applications

Applications:

The NTMFS4C029NT1G is suitable for a wide range of high voltage applications, including:

1. Motor control and drive circuits
2. Power supplies and converters
3. Battery management systems
4. Lighting ballasts and power control circuits
5. Automotive and industrial control systems
6. Renewable energy systems, such as solar panel power conditioning and wind turbine control circuits

The NTMFS4C029NT1G is available in a TO-220 package, making it suitable for both through-hole and surface-mount applications. It is also available in other packages, such as TO-247 and DPAK, depending on the specific requirements of the application.