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NTMFS4C55NT1G  

Single FETs, MOSFETs

The NTMFS4C55NT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and power management circuits.

Description:

The NTMFS4C55NT1G is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of up to 500V. It has a continuous drain current (ID) of 4.5A and a gate-source voltage (VGS) of 10V. The device is available in a TO-220 package.

Features:

• High voltage N-channel MOSFET
• Drain-to-source voltage (VDS) of up to 500V
• Continuous drain current (ID) of 4.5A
• Gate-source voltage (VGS) of 10V
• Low on-state resistance (RDS(on))
• Suitable for use in high voltage switching and power management circuits

Applications:

• High voltage switching applications
• Power management circuits
• Motor control applications
• DC-DC converters
• Class D audio amplifiers
• Industrial control systems

The NTMFS4C55NT1G is a reliable and efficient MOSFET transistor that can be used in a variety of high voltage applications. Its high drain-to-source voltage and continuous drain current make it suitable for use in power management circuits and motor control applications. Its low on-state resistance also makes it an ideal choice for use in high efficiency switching applications.

NTMFS4C55NT1G Documents

Download datasheets and manufacturer documentation for NTMFS4C55NT1G

PCN Assembly/Origin :

Wafer Fab Change 17/Oct/2022      

Datasheets :

NTMFS4C55N      

HTML Datasheet :

NTMFS4C55N      

PCN Design/Specification :

Wafer Fab Chg 31/Dec/2015       Enlarged Clip Implementation 15/Jan/2015      

Environmental Information :

onsemi RoHS       Material Declaration NTMFS4C55NT1G       onsemi REACH