


Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
NTMFS4C55NT1G Description
The NTMFS4C55NT1G is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and power management circuits.
Description:
The NTMFS4C55NT1G is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (VDS) of up to 500V. It has a continuous drain current (ID) of 4.5A and a gate-source voltage (VGS) of 10V. The device is available in a TO-220 package.
Features:
- High voltage N-channel MOSFET
- Drain-to-source voltage (VDS) of up to 500V
- Continuous drain current (ID) of 4.5A
- Gate-source voltage (VGS) of 10V
- Low on-state resistance (RDS(on))
- Suitable for use in high voltage switching and power management circuits
Applications:
- High voltage switching applications
- Power management circuits
- Motor control applications
- DC-DC converters
- Class D audio amplifiers
- Industrial control systems
The NTMFS4C55NT1G is a reliable and efficient MOSFET transistor that can be used in a variety of high voltage applications. Its high drain-to-source voltage and continuous drain current make it suitable for use in power management circuits and motor control applications. Its low on-state resistance also makes it an ideal choice for use in high efficiency switching applications.



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










