onsemi
NTMFS4H013NFT1G
Single FETs, MOSFETs
NTMFS4H013NFT1G
278-NTMFS4H013NFT1G
onsemi-NTMFS4H013NFT1G-datasheets-950999.pdf
MOSFET N-CH 25V 43A/269A 5DFN
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NTMFS4H013NFT1G Description
The NTMFS4H013NFT1G is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for high voltage applications and offers a number of features that make it suitable for a range of uses.
Description:
The NTMFS4H013NFT1G is an N-channel MOSFET with a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of 3.3A. It is available in a surface mount TO-220 package.
Features:
- High voltage operation: The NTMFS4H013NFT1G is designed to operate at high voltages, making it suitable for use in applications that require high voltage switches or drivers.
- Low on-state resistance (RDS(on)): The device has a low on-state resistance, which minimizes power dissipation and improves efficiency in switching applications.
- Fast switching speed: The NTMFS4H013NFT1G has a fast switching speed, which makes it suitable for use in high frequency applications.
- High input impedance: The device has a high input impedance, which makes it easy to drive with a variety of control signals.
Applications:
The NTMFS4H013NFT1G is suitable for a wide range of applications, including:
- High voltage switching and driving
- Motor control
- Power management
- Battery management
- Industrial control
- Automotive applications
Overall, the NTMFS4H013NFT1G is a high performance MOSFET that offers a range of features that make it suitable for use in a variety of high voltage applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance
NTMFS4H013NFT1G Documents
Download datasheets and manufacturer documentation for NTMFS4H013NFT1G
Product Discontinuance Notification (PDF) General Announcement - 2D Barcoding (PDF) Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd. Related Parts
Shopping Guide
Payment Methods
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