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NTMFS4H01NFT1G

The NTMFS4H01NFT1G is a high voltage MOSFET from ON Semiconductor. It is a N-channel enhancement mode field effect transistor that is designed for high voltage applications.

Description:

The NTMFS4H01NFT1G is a high voltage MOSFET that features a drain to source voltage (V_DSS) of -100V. It is an enhancement mode device, which means it requires a gate to source voltage (V_GS) greater than the threshold voltage (V_TH) to turn on the device. The device has a continuous drain current (I_D) of 4.1A and a pulsed drain current (I_D(P)) of 9.5A.

Features:

• N-Channel, Enhancement Mode Field Effect Transistor
• Drain to Source Voltage (V_DSS) of -100V
• Continuous Drain Current (I_D) of 4.1A
• Pulsed Drain Current (I_D(P)) of 9.5A
• Low Gate Threshold Voltage (V_TH)
• High Input Impedance
• Low On-State Resistance
• Suitable for High Voltage Applications

Applications:

The NTMFS4H01NFT1G is suitable for a wide range of high voltage applications, including:

• Switching Regulators
• DC to DC Converters
• Motor Control
• High Voltage Power Supplies
• Class D Audio Amplifiers
• Battery Management Systems

It is important to note that this is a general description and the actual applications may vary depending on the specific requirements of the system. It is always recommended to carefully read the datasheet and to consult with the manufacturer for the most up-to-date and detailed information.